Mass spectrometric study of gas-phase chemistry in a hot-wire chemical vapor deposition reactor with tetramethylsilane

Li, X.M.; Eustergerling, Brett; Shi, Yujun

doi:10.1016/j.ijms.2007.02.051

Cited by 35 publications

(63 citation statements)

References 37 publications

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“…A detailed description of the experimental setup using VUV SPI, including the ionization laser source, HWCVD reactor, and the TOF MS, has been reported previously [18,19,26]. Briefly, a HWCVD chamber is connected through a 0.15 mm diameter pinhole to the high-vacuum ionization chamber housing the TOF MS. A tungsten filament (0.5 mm diameter, 10 cm length) is placed in the HWCVD reactor and is resistively heated by a DC power supply.…”

Section: Methodsmentioning

confidence: 99%

“…Therefore, single-photon ionization (SPI) using 118 nm vacuum ultraviolet (VUV) laser radiation has proven to be a powerful technique for examining silane chemistry [6]. Our recent studies have shown that VUV SPI also works well with alkylsilane molecular systems in the HWCVD process [18,19]. However, many of the products predicted for the NH 3 and SiH 4 /NH 3 systems, notably H 2 and N 2 , have IPs greater than 10.5 eV.…”

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confidence: 99%

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Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with SiH₄-NH₃ gas mixtures

Eustergerling

Hedén

Shi

2007

J. Am. Soc. Mass Spectrom.

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The application of a laser-induced electron impact (LIEI) ionization source in studying the gas-phase chemistry of the SiH(4)/NH(3) hot-wire chemical vapor deposition (HWCVD) system has been investigated. The LIEI source is achieved by directing an unfocused laser beam containing both 118 nm (10.5 eV) vacuum ultraviolet (VUV) and 355 nm UV radiations to the repeller plate in a time-of-flight mass spectrometer. Comparison of the LIEI source with the conventional 118 nm VUV single-photon ionization (SPI) method has demonstrated that the intensities of the chemical species with ionization potentials (IP) above 10.5 eV, e.g., H(2), N(2) and He, have been significantly enhanced with the incorporation of the LIEI source. It is found that the SPI source due to the 118 nm VUV light coexists in the LIEI source. This allows simultaneous observations of parent ions with enhanced intensity from VUV SPI and their "fingerprint" fragmentation ions from LIEI. It is, therefore, an effective tool to diagnose the gas-phase chemical species involved with both NH(3) and SiH(4) in the HWCVD reactor. In using the LIEI source to SiH(4), NH(3) and their mixtures, it has been shown that the NH(3) decomposition is suppressed with the addition of SiH(4) molecules. Examination of the NH(3) decomposition percentage and the time to reach the N(2) and H(2) steady-state intensities for various NH(3)/SiH(4) mixtures suggests that the extent of the suppression is enhanced with more SiH(4) content in the mixture. With increasing filament temperatures, the negative effect of SiH(4) becomes less important.

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Section: Methodsmentioning

confidence: 99%

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confidence: 99%

Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with SiH₄-NH₃ gas mixtures

Eustergerling

Hedén

Shi

2007

J. Am. Soc. Mass Spectrom.

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“…In the decomposition of H 2 O, the production of OH and H is major at low catalyst temperatures, but H and O production becomes more dominant at high temperatures [37]. As for organosilicon compounds, selective and efficient decomposition is possible [51][52][53][54][55][56][57]. The decomposition paths are different from those in thermal decomposition.…”

Section: Discussion and Future Prospectsmentioning

confidence: 99%

Gas-phase diagnoses in catalytic chemical vapor deposition (hot-wire CVD) processes

Umemoto

2015

Thin Solid Films

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a b s t r a c tRadical species play key roles in chemical vapor deposition (CVD) processes, including catalytic CVD (hot-wire CVD), and evaluating their densities in the gas phase is important in understanding the underlying mechanisms and controlling the processes. There are many diagnosis techniques to detect radical species. Among them, photon-in-photon-out techniques, including one-and two-photon laser-induced fluorescence and photoabsorption, can be utilized under the low vacuum conditions typical in CVD processes. Highly sensitive, quantitative, state-specific, real-time, and non-intrusive detection is possible with these techniques; even spatial resolution can be obtained in some cases. At the same time, however, we should know the drawbacks and the limitations of such techniques. A compilation of the radical species detected so far in catalytic CVD processes is presented in a table.

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“…20,21 In brief, a HWCVD reactor, housing a heated tungsten filament, is incorporated by way of a 0.15 mm diameter pinhole into a high-vacuum ionization chamber for the TOF mass spectrometer (R. M. Jordan Inc.). The total pressures in the reactor are maintained at ~ 12 Torr using a mass flow controller (MFC), while those in the ionization chamber are ~ 4.0 x 10 -6 Torr under working conditions.…”

Section: Methodsmentioning

confidence: 99%

Formation of aminosilanes in the hot-wire chemical vapor deposition process using SiH4-NH3 gas mixtures

Eustergerling¹,

Shi²

2008

Arkivoc

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Vacuum ultraviolet laser single photon-ionization coupled with time-of-flight mass spectrometry has been used to detect the gas-phase reaction products from the HWCVD reactor with SiH 4 -NH 3 mixtures with various partial pressure ratios ranging from 1: 1 to 200 : 1 for NH 3 : SiH 4 . The identity of the products depends strongly on the relative amounts of SiH 4 and NH 3 in the mixture. Low NH 3 content favors the production of disilane and trisilane. When the NH 3 content is high, the formation of aminosilanes becomes the primary pathway. The production of sufficient amount of NH 2 (or ND 2 ) radicals is found to play a key role in the competition between the two pathways. The formation of aminosilanes when using mixtures with an ammonia to silane pressure ratio greater than 49 : 1 is confirmed through the use of the isotopomer ND 3 in place of NH 3 in the gas mixtures. A stepwise amination reaction scheme, initiated by the reaction between the SiH 3 and NH 2 radicals, is responsible for the formation of aminosilanes. The effect of filament temperature on the formation of aminosilanes and di-/trisilane has also been investigated.

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Mass spectrometric study of gas-phase chemistry in a hot-wire chemical vapor deposition reactor with tetramethylsilane

Cited by 35 publications

References 37 publications

Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with SiH₄-NH₃ gas mixtures

Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with SiH₄-NH₃ gas mixtures

Gas-phase diagnoses in catalytic chemical vapor deposition (hot-wire CVD) processes

Formation of aminosilanes in the hot-wire chemical vapor deposition process using SiH4-NH3 gas mixtures

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Mass spectrometric study of gas-phase chemistry in a hot-wire chemical vapor deposition reactor with tetramethylsilane

Cited by 35 publications

References 37 publications

Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with SiH4-NH3 gas mixtures

Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with SiH4-NH3 gas mixtures

Gas-phase diagnoses in catalytic chemical vapor deposition (hot-wire CVD) processes

Formation of aminosilanes in the hot-wire chemical vapor deposition process using SiH4-NH3 gas mixtures

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Product

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Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with SiH₄-NH₃ gas mixtures

Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with SiH₄-NH₃ gas mixtures