Mass Spectrometric Study of Ga (  CH 3 ) 3 and Ga (  C 2 H 5 )    3 Decomposition Reaction in  H 2 and  N 2

Yoshida, Masamichi; Watanabe, Hiroyuki; Uesugi, Fumihiko

doi:10.1149/1.2113929

Cited by 212 publications

(73 citation statements)

References 15 publications

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“…4 and 5b). The sublinear dependence on the TEG mole fraction indicates an intermediate surface coverage of the dominant Ga species, which is reasonable for TEG since it decomposes at temperatures significantly lower than TMG [16,18,19]. Similarly, the sublinear dependence on the TMSb mole fraction would also indicate an intermediate surface coverage of MMSb.…”

Section: Previous Studies For Teg/tmsbmentioning

confidence: 86%

Growth behavior of GaSb by metal–organic vapor-phase epitaxy

Rathi

Hawkins

Kuech

2006

Journal of Crystal Growth

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Section: Previous Studies For Teg/tmsbmentioning

confidence: 86%

Growth behavior of GaSb by metal–organic vapor-phase epitaxy

Rathi

Hawkins

Kuech

2006

Journal of Crystal Growth

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“…The temperature of 50% decomposition is about 300 C [4,5,8,9] which is much lower than typical growth temperatures. Thus, only very little carbon reaches the surface during growth.…”

Section: Introductionmentioning

confidence: 84%

In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy

Pristovsek

Zorn

Weyers

2004

Journal of Crystal Growth

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“…The pyrolysis of TMG has been widely studied. [8][9][10][11][12] The initial step in the TMG decomposition is generally agreed to be the removal of the first methyl radical, resulting in methane as the main product released in the decomposition. In the stepwise first order decomposition of TMG, an apparent activation energy has been measured for the first and second methyl groups, of 58-60 kcal/mol ͑Refs.…”

mentioning

confidence: 99%

“…These results are in agreement with previous determinations of these pyrolysis reactions. [9][10][11] The decomposition of TMG in a feed composition of 60% H 2 , 35% ND 3 and 5% TMG is also presented in Fig. 2.…”

mentioning

confidence: 99%

High temperature adduct formation of trimethylgallium and ammonia

Thon¹,

Kuech²

1996

Applied Physics Letters

152

106

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High temperature gas phase reactions between trimethylgallium ͑TMG͒ and ammonia were studied by means of in situ mass spectroscopy in an isothermal flow tube reactor. The temperature, pressure, and reaction time were chosen to emulate the gas phase environment typical of the metal-organic vapor phase epitaxy ͑MOVPE͒ of GaN. The main gas phase species is ͓(CH 3 ͒ 2 Ga:NH 2 ͔ x , where most probably xϭ3, resulting from the very fast adduct formation followed by elimination of methane. The further gas phase decomposition of this species proceeds through the stepwise elimination of methane. These studies indicate that little TMG exists within the growth ambient under most MOVPE growth conditions. The further gas phase reaction of ͓(CH 3 ͒ 2 Ga:NH 2 ͔ x may be responsible for the strong dependence of the MOVPE GaN growth rate and uniformity commonly observed. © 1996 American Institute of Physics. ͓S0003-6951͑96͒00527-X͔The metal-organic vapor phase epitaxy ͑MOVPE͒ has emerged as the current growth technique of choice for the growth of GaN for device structures.1 Recent successes in the MOVPE formation of commercially viable blue and green light emitters have resulted in an increased activity in understanding the growth process and its relationship to the physical properties of these materials. While MOVPE can produce these materials, the growth of device-quality GaN is complicated by the severe and complicated gas phase interactions, that occur between trimethylgallium ͓͑TMG or (CH 3 ͒ 3 Ga͔ and ammonia, NH 3 which are the commonly used growth precursors.2 These gas phase interactions have been suggested to lead to gas phase depletion of the growth nutrients leading to a degradation in the growth uniformity and efficiency.3 A primary gas phase reaction is the strong adduct forming reaction between NH 3 and TMG. [4][5][6][7] In this present study, we have directly monitored this gas phase reaction in order to better understand its impact on the growth process and system design under those conditions particularly important for MOVPE growth. The species responsible for growth are the direct result of these gas phase reactions.The gas phase reactions of both TMG and NH 3 , individually, are relatively understood at this point. The pyrolysis of TMG has been widely studied. [8][9][10][11][12] The initial step in the TMG decomposition is generally agreed to be the removal of the first methyl radical, resulting in methane as the main product released in the decomposition. In the stepwise first order decomposition of TMG, an apparent activation energy has been measured for the first and second methyl groups, of 58-60 kcal/mol ͑Refs. 8 and 10͒ and 35.4 kcal/ mol, respectively.8 Under similar thermal conditions ammonia is quite stable. The gas phase decomposition of NH 3 occurs only at very high temperatures. 13 The heterogeneous decomposition of NH 3 may, therefore, be essential to GaN growth.The gas phase reaction between (CH 3 ) 3 Ga and NH 3 is less understood, particularly at elevated temperatures characteristic of MOVPE ...

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Mass Spectrometric Study of Ga ( CH 3 ) 3 and Ga ( C 2 H 5 ) 3 Decomposition Reaction in H 2 and N 2

Cited by 212 publications

References 15 publications

Growth behavior of GaSb by metal–organic vapor-phase epitaxy

Growth behavior of GaSb by metal–organic vapor-phase epitaxy

In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy

High temperature adduct formation of trimethylgallium and ammonia

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