Mass production of AlGaAs laser diodes using MBE

Abstract

This paper first shows the basic idea about the mass production technology of AlGaAs laser diodes using Molecular Beam Epitaxy (MBE) technique. "GaAs passivation technique" is the key to realize the stable mass production of self-aligned structure laser diodes. This paper, then, describes the designing concept and performance of a novel laser diode for short-haul optical data communications which we have recently developed. It has a high relaxation oscillation frequency, around 3GHz, which is favorable to transmit data at a rate of 600 to 1200Mbps. The lifetime (MTTF) is above 100,000hours under 3mW cw operation at 60°C.In 1984, we succeeded for the first time in putting MBE technique into practical use. 2,3 Since then the MBE technique has been playing an important role in the mass production of the 0819416142/94/$6.OO SPIE Vol. 2290 / 321 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/15/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx