Mass Loss in SiC Crystal Growth Process

Abstract

The research investigated the mass loss in SiC crystal growth process by analyzing the effects of the content of Si appending in sources material, growth temperature, growth time and atmosphere pressure. The results indicate that mass loss of total system material (source material + crucible + crystal) and crucible augments with increasing of content of Si in sources material, growth temperature and growth time, but crystal mass gain increases. With increasing of atmosphere pressure, mass loss of system material decreases, crucible mass loss increases, crystal mass gain decreases. Si inclusions in crystal multiply with the increasing of the content of Si in source material.