Mass flux and partial pressures of ZnSe by physical vapor transport

Su, Ching‐Hua; Sha, Yi‐Gao; Mazuruk, K.; Lehoczky, S. L.; Liu, Hao-Chieh; Fang, Rei; Brebrick, R. F.

doi:10.1016/0022-0248(95)00509-9

Cited by 13 publications

(3 citation statements)

References 39 publications

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“…Apart from these drawbacks, crystallization from vapor by physical vapor transport (PVT) or dissociative sublimation presents some advantages over melt growth: 1) the lower processing temperature involved, 2) the purification effect as the result of the differences in the vapor pressures of the native elements and the impurities, and 3) the higher interfacial morphological stability of the solid-vapor interfaces. The mass fluxes of ZnSe by PVT have been measured in the temperature range 1050-1140˚C using an in situ dynamic technique and have been found in good agreement with those calculated from a one-dimensional diffusion model [60]. In the PVT of II-VI compounds, the species found in the vapor phase are group II elements, Zn or Cd, and diatomic molecules of group VI elements, O 2 , S 2 , Se 2 , or Te 2 .…”

Section: Znsesupporting

confidence: 58%

Growth of Zinc Chalcogenides

Triboulet

2003

Crystal Growth Technology

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Section: Znsesupporting

confidence: 58%

Growth of Zinc Chalcogenides

Triboulet

2003

Crystal Growth Technology

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“…The ampoules were cleaned and baked out under vacuum at 1080 °C for 16 h. About 29.7 g of high purity (99.999%) ZnSe powder, provided by Alfa Aesar, was loaded inside each ampoule. After the starting materials were heat treated by H 2 reduction followed by baking under vacuum, [ 10,11 ] the loaded ampoules were sealed at about 10 cm from the conical tip by H 2 –O 2 torch under a vacuum of 2 × 10 −8 atmosphere and the 13 cm long growth ampoules were cut from the original 40 cm long tubing. The crystal growths by PVT were processed horizontally inside multizone resistance‐heated tubular furnaces with the ampoules at the temperature range of 1100–1150 °C for 210 h with a furnace translation rate of 5 mm per day.…”

Section: Methodsmentioning

confidence: 99%

Improving Quality of Material by Reducing Its Interaction with Fused Silica Container During Processing

2020

Crystal Research and Technology

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During the processing of electronic and optical materials at elevated temperature, the sample has the tendency to interact with the fused silica container and form chemical bonding, the so‐called “wetting”, which makes the surface section of the sample attaching to the ampoule wall. When the sample is cooled down to room temperature after the processing, as the bulk of the sample goes through thermal contraction, the wetting area remains attached to the fused silica wall and, consequently, causes the sample to separate apart which causes cracks and other structural defects. These defects are detrimental to the electronic/optic performance of materials, especially on the applications of high‐quality compound semiconductors. It is demonstrated, in this paper, that by adding a simple procedure of hydrofluoride acid etching of empty ampoule, the wetting of the sample can be reduced during the high temperature processing of crystal growth and, as a result, the structural quality of the semiconductors can be significantly improved.

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“…Physical vapor transport (PVT) has recently been studied as a way to make single crystal ZnSe for substrate material or, in fact, for devices [1,2]. PVT has many advantages including lower processing temperature than growing from melt, it acts as a purification process, and most solid-vapor interfaces exhibit higher interfacial morphological stability than their solid-liquid interface counterparts.…”

Section: Introductionmentioning

confidence: 99%

Dielectric Spectroscopy Study Of Znse Grown By Physical Vapor Transport

Kokan

Gerhardt

1997

MRS Proc.

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ZnSe, although generally thought of as a wide band gap semiconductor, is insulating in the as-grown state. It is only after heat treatment in a zinc rich atmosphere that semiconducting properties are observed Therefore, dielectric spectroscopy is an appropriate tool to study the electrical properties of as grown ZnSe. The dielectric properties of large-grained samples of ZnSe grown by physical vapor transport were measured as a function of frequency. Differences can be seen in the dielectric properties of samples grown under different conditions (such as the effect of a seed and the orientation of the gravity field during growth). The spectra of heat treated samples were also acquired and were found to exhibit significant deviations from those of the as grown crystals.

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Mass flux and partial pressures of ZnSe by physical vapor transport

Cited by 13 publications

References 39 publications

Growth of Zinc Chalcogenides

Growth of Zinc Chalcogenides

Improving Quality of Material by Reducing Its Interaction with Fused Silica Container During Processing

Dielectric Spectroscopy Study Of Znse Grown By Physical Vapor Transport

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