Mass and dose dependence of ion-implantation-induced intermixing of GaAs/GaAlAs quantum-well structures

Leier, H.; Forchel, A.; Hörcher, G.; Hommel, J.; Bayer, S.; Rothfritz, H.; Weimann, G.; Schlapp, W.

doi:10.1063/1.345607

Cited by 69 publications

(10 citation statements)

References 44 publications

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“…The technological interest on this effect arises from the possibility to tune the wavelength of an optical emitter by simply annealing the device. On the other hand, it has been shown in III -V quantum .wells that the selective implantation of ions in a semiconductor heterostructure offers the possibility to define a lateral confinement [3,4]. Up to now the investigation of diffusion in heterostructures has been restricted mainly to 111-V materials.…”

Section: Introductionmentioning

confidence: 99%

Optical study of interdiffusion in CdTe and ZnSe based quantum wells

Tönnies

Bacher

Forchel

et al. 1994

Journal of Crystal Growth

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The interdiffusion in single quantum well structures was studied for a variety of II -VI semiconductor materials based on CdTe and ZnSe. In particular we have investigated CdTejCdMnTe, CdTejCdMgTe, HgxCdt_xTejHg y Cd t _ y Te and ZnSejCdZnSe structures in which an intermixing of column II elements can be induced as well as ZnSejZnSSe allowing an interdiffusion within the column VI sublattice. The diffusion was induced by rapid thermal annealing (RTA) for 1 min at different temperatures. The resulting blue shift of the characteristic emission spectrum was analyzed using photoluminescence spectroscopy. We observed a significant differencc of thc diffusion behavior between both groups of materials. While in all three CdTe based material systems an almost complete intcrdiffusion within the column II sublattice could be obtained at a high optical quality of the structures, both ZnSe based quantum wells show only remarkably small diffusion lengths. For all three CdTe based quantum wells we derived an activation energy of the interdiffusion process from a simple Fickian diffusion model applied to our measurements. We obtained a value of 2.8 eV for CdTejCdMnTe and CdTejCdMgTe and a value 2.1 eV for HgxCdt_xTejHgyCdl_yTe.Due to the fundamental role of diffusion for the production of semiconductor devices, the study of diffusion in semiconductor crystals has been of large interest in the last years. Self-diffusion or impurity diffusion in 111-V and 11-VI bulk materials was studied, e.g. by secondary ion mass spectroscopy (SIMS), a technique that allows a direct scanning of the diffusion profile [1]. In recent years, diffusion has also been investigated in thin heterostructures which offer an * Corresponding author.interesting source of concentration gradients. The interdiffusion of the materials in the well and barrier layers results in a blue shift of the emission spectrum [2]. The technological interest on this effect arises from the possibility to tune the wavelength of an optical emitter by simply annealing the device. On the other hand, it has been shown in III -V quantum .wells that the selective implantation of ions in a semiconductor heterostructure offers the possibility to define a lateral confinement [3,4]. Up to now the investigation of diffusion in heterostructures has been restricted mainly to 111-V materials. Only few 0022-0248/94/$07.00

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Section: Introductionmentioning

confidence: 99%

Optical study of interdiffusion in CdTe and ZnSe based quantum wells

Tönnies

Bacher

Forchel

et al. 1994

Journal of Crystal Growth

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“…[5][6][7][8] In the field of II-VI semiconductor heterostructures implantation enhanced interdiffusion has been studied for CdTe/ZnTe multiple quantum well structures, 9 while, to our knowledge, information about implantation induced intermixing in other II-VI heterostructures is scarce. In order to obtain a high quantum efficiency nonradiative recombination at surfaces should be avoided.…”

Section: Ion-implantation Induced Interdiffusion In Cdte/cdmgte Quantmentioning

confidence: 99%

Ion-implantation induced interdiffusion in CdTe/CdMgTe quantum wells

Tönnies

Bacher

Eisert

et al. 1994

Applied Physics Letters

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“…After ion implantation, an annealing process is necessary to activate the dopants and restore the defects. More importantly, ion implantation also has important applications in the field of material synthesis, including nanoparticles (NPs), positive‐negative (PN) junctions, and quantum dots . This technique, as a pure physical process, does not introduce any impurities into the target materials.…”

Section: Introductionmentioning

confidence: 99%

A Review of Recent Applications of Ion Beam Techniques on Nanomaterial Surface Modification: Design of Nanostructures and Energy Harvesting

Zhan

Song

et al. 2019

Small

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properties because of their special struc ture. When the materials reach a nano meter size, the electrical, optical, magnetic, and other properties of the materials will be altered greatly because of the small size effect, quantum size effect, sur face and boundary effects, and Coulomb blockade effect. [1] Currently, nanomaterials have been widely applied in many fields, including computers, catalysis, sensors, energy, and environmental protection. [2][3][4][5][6][7][8][9][10][11] As the demand increases, people aspire to fabricate nanomaterials with greater prop erties. Many methods have been used to improve the properties of nanomaterials, including doping, surface reconstruc tion, semiconductor composite, and metal nanoparticle embedding. [12][13][14][15][16][17][18][19][20] These days, ion beam techniques, including ion implantation, irradiation, and focused ion beam (FIB), have been extensively used to modulate the properties of nanomaterials. Moreover, ion beam techniques are regarded as a promising technique for doping and surface modification. Compared with doping during growth and diffusion, ion implantation is more controllable and reproducible. In addition, ion implantation is also an effective method for embedding nanoclusters in body materials. Moreover, ion irradiation is an effective method to modulate the morphology and surface structure of the mate rials. Therefore, via using this technique, various properties of nanomaterials can be tailored. FIB is typically used for the in situ study of ionirradiated materials. Figure 1 shows the applications of ion beam techniques for nanomaterial surface modification.Ion implantation, as an ion beam technique, has been extensively applied to the modulation of nanomaterial sur faces. Moreover, the technique has also been extensively used in the field of microelectronics. Ion implantation has replaced diffusion as a doping method to introduce dopants into the semiconductors. As an industrial technique, it exhibits high controllability and accuracy. In contrast to other doping strat egies, almost all elements can be introduced into the target materials by ion implantation and it does not introduce other impurity elements. In addition, ion implantation is not restricted by the solid solubility of elements in the mate rials. Ion implantation can be described as a collision process Nanomaterials have gained plenty of research interest because of their excellent performance, which is derived from their small size and special structure. In practical applications, to acquire nanomaterials with high performance, many methods have been used to modulate the structure and components of materials. To date, ion beam techniques have extensively been applied for modulating the performance of various nanomaterials. Energetic ion beams can modulate the surface morphology and chemical components of nanomaterials. In addition, ion beam techniques have also been used to fabricate nanomaterials, including 2D materials, nanoparticles, and nanowires. Compared with conventional metho...

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Mass and dose dependence of ion-implantation-induced intermixing of GaAs/GaAlAs quantum-well structures

Cited by 69 publications

References 44 publications

Optical study of interdiffusion in CdTe and ZnSe based quantum wells

Optical study of interdiffusion in CdTe and ZnSe based quantum wells

Ion-implantation induced interdiffusion in CdTe/CdMgTe quantum wells

A Review of Recent Applications of Ion Beam Techniques on Nanomaterial Surface Modification: Design of Nanostructures and Energy Harvesting

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