Maskless ion beam lithography system

Lee, Y.; Gough, Richard; King, Tsu Jae; Ji, Qing; Leung, K. N.; McGill, R. Andrew; Ngo, V. V.; Williams, M. D.; Zahir, N.

doi:10.1016/s0167-9317(99)00042-8

Cited by 5 publications

(3 citation statements)

References 2 publications

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“…More recently, filament-discharge multicusp ion sources have been investigated for application in projection lithography [25,26] and focused ion beam [27]. Our interest lies in the micromilling of silicon substrate and gemstones.…”

Section: Wutte Et Almentioning

confidence: 99%

“…In the interest of plasma applications, several rf inductively modelling studies [13][14][15][16][17][18][19][20] have been made on frequency, skin depth, gas type, internal and external discharge and E-H mode jump with reasonably good agreement with data obtained from measurements. As for ion source application, a 13.56 MHz inductively coupled internal discharge or so-called rf-driven source has been studied extensively recently by a group at the Lawrence Berkeley National Laboratory [3,[21][22][23] and elsewhere [24][25][26]. Lee et al [23] operated their 10 cm diameter and 10 cm long rf-driven multicusp ion source with a maximum output power of 2.5 kW.…”

Section: Introductionmentioning

confidence: 99%

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Characteristics of a 13.56 MHz radiofrequency-driven multicusp ion source

Boonyawan

Chiraphatpimol

Vilaithong

2002

Plasma Sources Sci. Technol.

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The characteristics of a radiofrequency (rf)-driven multicusp ion source are investigated. The ion source is an Nd-Fe-B magnetic multicusp type operated at 13.56 MHz with an internal quartz covered antenna. The source has been diagnosed by an rf-compensated Langmuir probe for uniformity, density and electron temperature. A retarding field energy analyser, and a multi-wire beam profile monitor and quadrupole magnet system have been used for beam energy spread and emittance measurements. Experiments were performed with argon gas and rf power up to 500 W. A plasma density of up to 1.5 × 10 18 m −3 was obtained. The rms beam emittance is found to be about 32 ± 4 mm mrad, and the energy spread of the argon beam is around 3.1 ± 0.5 eV at 3 kV extraction. The rf coupling to the extracting voltage could be suppressed by a 1.2 mH rf choke, which results in the reduction of the axial energy spread in the extracted beam.

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Section: Wutte Et Almentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Characteristics of a 13.56 MHz radiofrequency-driven multicusp ion source

Boonyawan

Chiraphatpimol

Vilaithong

2002

Plasma Sources Sci. Technol.

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“…Owing to the high fabrication cost and long production time for photomasks, the multi photomask lithography processes are driving the development of lithography without conventional photomasks. 1) There were reports about maskless photography methods such as the use of the digital mirror device (DMD), [2][3][4][5][6][7][8] laser direct imaging (LDI), [9][10][11][12][13][14] electron beam lithography (EBL), [15][16][17][18][19][20][21] ion beam lithography (IBL), [22][23][24] and the use of the liquid crystal mask (LCM). [25][26][27] LCM photolithography technology can shorten the develop time and reduce the production cost of PCBs compared with the conventional photolithography technology.…”

Section: Introductionmentioning

confidence: 99%

Development of Photolithography Process for Printed Circuit Board Using Liquid Crystal Mask in Place of Photomask

Lee²,

Hong

et al. 2012

Jpn. J. Appl. Phys.

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The state-selective dissociation dynamics for anionic and excited neutral fragments of gaseous SiCl 4 following Cl 2p and Si 2p core-level excitations were characterized by combining measurements of the photoninduced anionic dissociation, x-ray absorption and UV/visible dispersed fluorescence. The transitions of core electrons to high Rydberg states/doubly excited states in the vicinity of both Si 2p and Cl 2p ionization thresholds of gaseous SiCl 4 lead to a remarkably enhanced production of anionic, Si − and Cl − , fragments and excited neutral atomic, Si * , fragments. This enhancement via core-level excitation near the ionization threshold of gaseous SiCl 4 is explained in terms of the contributions from the Auger decay of doubly excited states, shake-modified resonant Auger decay, or/and post-collision interaction. These complementary results provide insight into the state-selective anionic and excited neutral fragmentation of gaseous molecules via core-level excitation.

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Beam Diameter Reduction by Optimization of an Extraction Condition in a Compact Ion Microbeam System

Ohkubo

Ishii

2017

Physics Procedia

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Maskless ion beam lithography system

Cited by 5 publications

References 2 publications

Characteristics of a 13.56 MHz radiofrequency-driven multicusp ion source

Characteristics of a 13.56 MHz radiofrequency-driven multicusp ion source

Development of Photolithography Process for Printed Circuit Board Using Liquid Crystal Mask in Place of Photomask

Beam Diameter Reduction by Optimization of an Extraction Condition in a Compact Ion Microbeam System

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