1999
DOI: 10.1116/1.590952
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Maskless extreme ultraviolet lithography

Abstract: Development of the point diffraction interferometer for extreme ultraviolet lithography: Design, fabrication, and evaluation J.Masks have been identified as the high risk, high cost issue for extreme ultraviolet ͑EUV͒ lithography. Challenges in EUV mask technology such as providing a pellicle and correcting defects have prompted the search for a maskless technique. Here we describe two approaches in which the mask of a current EUV system is replaced by an array of micron-sized mirrors. Patterns are achieved by… Show more

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Cited by 57 publications
(29 citation statements)
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“…Consequently, the mask will be very fragile to environmental effects and particulation. A good solution to this problem may be to protect the mask in vacuum environment, but this time putting the mask into vacuum environment exposure chamber for exposure will be a time consuming and impractical task [8,9].…”
Section: Needs For Maskless Optical Lithographymentioning
confidence: 99%
See 4 more Smart Citations
“…Consequently, the mask will be very fragile to environmental effects and particulation. A good solution to this problem may be to protect the mask in vacuum environment, but this time putting the mask into vacuum environment exposure chamber for exposure will be a time consuming and impractical task [8,9].…”
Section: Needs For Maskless Optical Lithographymentioning
confidence: 99%
“…Moreover, the fabrication of this reflector is not an easy and low cost process. Still a defect free Mo/Si mask fabrication is investigated, however, the cost of this mask is expected to be US $120000, and a mask set of 25-30 masks will be more than US $3 million [7,8]. Mask handling in EUV optical lithography also creates some problems for solid masks.…”
Section: Needs For Maskless Optical Lithographymentioning
confidence: 99%
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