2002
DOI: 10.1016/s0167-9317(02)00528-2
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Maskless electron beam lithography: prospects, progress, and challenges

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Cited by 77 publications
(48 citation statements)
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“…43,44 Although multitiered features can be fabricated with high resolution, the fabrication takes a long time and requires precise alignment, making it unsuitable for fabricating complex structures.…”
Section: -13mentioning
confidence: 99%
“…43,44 Although multitiered features can be fabricated with high resolution, the fabrication takes a long time and requires precise alignment, making it unsuitable for fabricating complex structures.…”
Section: -13mentioning
confidence: 99%
“…Improving the resolution of this technique to tens of nanometers requires the use of smaller wavelengths for mask exposure (EUV (10-70 nm) or X-rays with wavelengths below 10 nm). So far, the trend towards device miniaturization sustained the development of advanced optical [8] and electron-beam lithography [9]. In turn, this increased enormously the fabrication cost of nanostructures.…”
Section: 'Conventional' Versus 'Non-conventional'mentioning
confidence: 99%
“…Katsumura et al (2005) adopted a new substrate made of a material that reduces the influence of the electron backscattering and attempted to record high-density patterning beyond 200 Gbit/in 2 density. However, the critical issue of electron beam lithography is its throughput, which prevents this technique from the mainstream of VLSI manufacturing (Groves et al 2002). Direct writing method was applied to fabricate high-density disk by (Cartwright 2002;Hosaka et al 2002), with which mass production cannot be achieved.…”
Section: Introductionmentioning
confidence: 99%