Mask readiness for EUVL pilot line

Abstract

EUVL pilot line will be launched in 2012 with several pre-production tools installed in world wide. Since there will be still the productivity issue on the exposure tool, certain demand of EUV masks may be required in 2012. In this presentation, the status of EUV mask readiness, such as pattern quality, related infrastructures, and mask handling flow etc., will be discussed.

Electron multi-beam technology for mask and wafer writing at 0.1nm address grid

“…Figure 13: eMET POC exposure of ILT mask pattern in HSQ negative and pCAR positive resist.The ILT test pattern was provided by DNP[18,19] and was exposed according to design and also with 2-times shrink.…”