Mask‐free prototyping of metal‐oxide‐semiconductor devices utilizing focused electron beam induced deposition

Abstract

Focused electron beam induced deposition (FEBID) is a novel direct‐writing technique to produce noble metal nanostructures. In this work, FEBID has been employed for the first time to fabricate metal‐oxide‐semiconductor capacitors (MOSCAPs). Experimental parameters such as precursor temperature, substrate temperature and the (de)focus of the electron beam have been optimized to deposit electrode structures of a relatively large area within a short timeframe. Using FEBID, gold electrodes have been deposited on top of an atomic layer deposited (ALD) dielectric aluminum oxide layer. Chemical composition of the produced structures has been studied using energy dispersive X‐ray spectroscopy (EDX). Current–voltage (I–V) measurements have confirmed the conductivity of FEBID gold nanowires (NWs). Measured capacitance–voltage (C–V) characteristics of FEBID‐fabricated MOSCAP prototypes resemble the typical C–V characteristics of conventionally fabricated MOSCAPs, thus confirming the functionality of our FEBID devices. Illustration of a MOS capacitor fabricated by FEBID.

Focused Electron Beam‐Induced CVD of Iron: a Practical Guide for Direct Writing

“…This post–deposition processing will further improve the packing density in ML devices fabricated by FEBID. On the other hand, where a large and thick layer must be deposited, we suggest using lower AV (<1 kV) in combination with the highest BC (4.36 nA).…”

Highly conductive and pure gold nanostructures grown by electron beam induced deposition

“…For example, various materials, including iron 8 9 10 , cobalt 11 12 , tungsten 13 , and platinum 14 15 have already been deposited for applications such as nanomagnet logic 16 , magnetic force microscopy 17 18 19 , hall sensors 11 20 , patterning stencil masks 21 , separating nanoparticles 22 23 , and plasmonics 24 25 . FEBID has also been used to deposit gold nanostructures for metal-oxide semiconductor capacitors 26 and nanoantennas for surface-enhanced Raman spectroscopy 27 28 .…”

Direct writing of gold nanostructures with an electron beam: On the way to pure nanostructures by combining optimized deposition with oxygen-plasma treatment

“…1 ,e). In the latter case, the deposited structures had an area measured in hundreds of square micrometers, making them suitable for applications in electronics [ 41 ]. However, FEBID of such large structures is very challenging and requires very stable experimental conditions over a long time.…”

“…Many applications require precise positioning of Au structures on the nanoscale, e.g., for fabrication of interconnects [ 31 – 32 ] and field emission tips [ 33 ] or in direct writing of plasmonic and photonic nanostructures and devices [ 4 , 34 – 40 ]. We recently utilized FEBID of Au to directly write metal-oxide-semiconductor capacitors [ 41 ] and to deposit Au nanocatalyst templates for Si nanowire syntheses [ 42 ].…”