Mask error tensor and causality of mask error enhancement for low-k 1 imaging: theory and experiments

Chen, Chun-Kuang; Gau, Tsai‐Sheng; Shin, Jaw‐Jung; Liu, Ru-Gun; Yu, Shinn-Sheng; Yen, Anthony; Lin, Burn J.

doi:10.1117/12.474574

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“…Other authors have generated an expression in which the impact of mask linewidth variations on wafer critical dimensions is also shown to be inversely proportional to the image log-slope: 11 ILS CD…”

Section: Shown Inmentioning

confidence: 98%

Proposal for determining exposure latitude requirements

Levinson

Koenig³

et al. 2008

Optical Microlithography XXI

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To determine the magnitude of the exposure latitude required for a process to be manufacturable, additional factors are considered that have a similar relationship between linewidth variation and image log-slope. Such parameters include resist thickness, flare, post-exposure bake temperature, and line-edge roughness. To obtain consistency between theory and experiment it is necessary to use the resist-edge log-slope generalization of image log-slope. Inclusion of these additional factors increases the required exposure latitude several times more than would be considered necessary from exposure tool dose control alone.

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Section: Shown Inmentioning

confidence: 98%