Mask error factor: causes and implications for process latitude

Schoot, Jan B.P. van; Finders, Jo; Schenau, Koen van Ingen; Klaassen, Michel; Buijk, Corine

doi:10.1117/12.354338

Cited by 32 publications

(9 citation statements)

References 6 publications

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“…This has been shown for the different flavors of off-axis illumination [5] and is also demonstrated by the aerial simulation data in Fig. 5.…”

Section: Introductionmentioning

confidence: 76%

<title>Mask error enhancement factor</title>

Maurer

2000

SPIE Proceedings

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Optical lithography at the limit of resolution is a highly non-linear pattern transfer process. One consequence of this is an apparent magnification of mask errors. The paper first demonstrates early experimental evidence of this effect. Then it assesses the influence of pattern geometry, of the lithography tool setup, and of different optical enhancement techniques on the MEEF using primarily simulation data. The correspondence of MEEF as an effect of mask linewidth variations to the increased printability of mask defects is illustrated. Strategies to minimize the MEEF -like alternating phase shift masks -are presented. Because the MEEF describes conveniently the concerted action of all components on the whole lithographic pattern transfer process, it is proposed to use the MEEF as a new yardstick to characterize the degree of difficulty of a given lithographic process.

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“…This has been shown for the different flavors of off-axis illumination [5] and is also demonstrated by the aerial simulation data in Fig. 5.…”

Section: Introductionmentioning

confidence: 76%

<title>Mask error enhancement factor</title>

Maurer

2000

SPIE Proceedings

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“…The reticle CD's for all the individual features are measured with a Leica LWM250. For the two bar patterns Reticle Error Correction (REC) was necessary and was applied with a MEF of 1 which has been experimentally verified [6,7]. For the isolation pattern no REC was applied.…”

Section: Methodsmentioning

confidence: 99%

Printing 130-nm DRAM isolation pattern: Zernike correlation and tool improvement

et al. 2001

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To meet lithographic requirements for the 130nm generation, the influence of aberrations on printing of various circuit patterns is investigated. This paper shows such a process for specific patterns that are sensitive to odd aberrations, coma and three wave. The aberration sensitivities are calculated, and the effect on printing these patterns predicted and experimentally verified. This analysis leads to slight changes in lens adjustment strategy to accommodate the printing of specific DRAM patterns. Additional improvements in materials and surface figures, as well as reduction in process-induced aberrations and associated RMS wave front error, enable the production of tools that are fully capable of printing the 130nm device generation.The importance of collaboration between makers of lithography tools and their customers cannot be underestimated in finding tool specific limitations. Because of the length of the design cycle of lithography tools it is necessary to perform analysis of device patterns often many years in advance. The current work also indicates that patterns that have historically been used to determine lens specifications, such as dense and isolated lines, are insufficient to fully determine lens specifications.This paper also outlines techniques that can be used to reduce aberration sensitivities by use of resolution enhancement techniques. This is another area where close interaction between vendor and customer is needed.

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“…͑28͒ stays rather constant. 21 With Eq. ͑31͒ this offset change has an immediate effect on the printed CD: Example 25.…”

Section: Mask Error Factorsmentioning

confidence: 98%

Formulas for lithographic parameters when printing isolated and dense lines

Straaijer

2005

J. Micro/Nanolith. MEMS MOEMS

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Some practical physics-based formulas have been derived to make quick estimates of imaging performances in lithographic systems. These formulas have a simple structure so that they can be used in mathematical worksheets or, if desired, on a pocket calculator. Formulas have been derived to predict the printing of dense lines, bright field isolated lines, and dark field isolated spaces in positive resist. They are for exposures from binary masks and give exposure latitude, focus depth, and change in critical dimension. These parameters are also derived as a function of fading of the aerial images in lateral and focal directions. Validity has been checked with simulations. It proved that, in cases of the aerial image fading and of focus depth evaluation, only a few adjustment parameters were needed to obtain a reasonably good match with simulations. A table with all basic imaging parameters and their dependence on disturbances such as fading is included.

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Mask error factor: causes and implications for process latitude

Cited by 32 publications

References 6 publications

<title>Mask error enhancement factor</title>

<title>Mask error enhancement factor</title>

Printing 130-nm DRAM isolation pattern: Zernike correlation and tool improvement

Formulas for lithographic parameters when printing isolated and dense lines

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