Martensitic transformation in Ni–Mn–Ga/Si(100) thin films

Aseguinolaza, I. R.; Orúe, I.; Svalov, A. V.; Wilson, Kevin; Müllner, Peter; Barandiarán, J.M.; Chernenko, V.A.

doi:10.1016/j.tsf.2014.02.056

Cited by 23 publications

(14 citation statements)

References 32 publications

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“…As Si technology is well established and widely used in microelectronics, Si (001) substrates have been also explored for a deposition of Ni-Mn-Ga thin films. So far, highly textured polycrystalline FSMA films have been obtained onto Si [22,23].…”

Section: Introductionmentioning

confidence: 99%

Self-patterning of epitaxial Ni–Mn–Ga/MgO(001) thin films

et al. 2016

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In this work, a detailed report on the growth of elongated bar-like crystallites with a definite crystallographic orientation, forming a self-organized patterned surface layer, with a thickness of about 100 nm, onto 900 nm thick ferromagnetic shape memory alloy Ni-Mn-Ga films epitaxially grown on MgO(001) is presented. The phenomenon appears above a threshold of lattice mismatch (≈2%) between the film and substrate. The structural, magnetic and transformation properties of such films are described and analyzed. Particularly, the different magnetic states of the two film layers are discerned by ferromagnetic resonance. The feasibility of creating a ferromagnetic shape memory alloy with a nanoscale self-patterned surface, during the very same process of film deposition, can be interesting for potential applications where control of the surface architecture would be needed.

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Section: Introductionmentioning

confidence: 99%

Self-patterning of epitaxial Ni–Mn–Ga/MgO(001) thin films

et al. 2016

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“…11 Generally, Ni-Mn-Ga FSMAs are highly brittle in nature, hindering their use in practical applications. To overcome the brittleness of Ni-Mn-Ga alloys, various innovative fabrication routes have been introduced, resulting in melt-spun ribbons, 12 foils, 13 nanostructured powder, 14 plates, 15 composites, 7 thin films, 16 and foams. 17 Among these, synthesis of Ni-Mn-Ga alloy in thin-film form with significant ductility is of great interest because such materials are promising candidates for use in microelectromechanical system (MEMS) applications, for example, microactuators and microvalves.…”

Section: Introductionmentioning

confidence: 99%

“…17 Among these, synthesis of Ni-Mn-Ga alloy in thin-film form with significant ductility is of great interest because such materials are promising candidates for use in microelectromechanical system (MEMS) applications, for example, microactuators and microvalves. 18 Several types of techniques such as flash evaporation, 19 pulsed laser deposition (PLD), 20 magnetron sputtering, 16 and molecular beam epitaxy (MBE) 21 have been used to deposit Ni-Mn-Ga thin films. Compared with other techniques, magnetron sputtering is an effective technique to tailor the composition of the film, which influences the saturation magnetization, martensitic transformation temperature, Curie temperature, and magnetocrystalline anisotropy.…”

Section: Introductionmentioning

confidence: 99%

Structural and Magnetic Properties of Sputter-Deposited Polycrystalline Ni-Mn-Ga Ferromagnetic Shape-Memory Thin Films

Kumar

Seenithurai

Raja

et al. 2015

Journal of Elec Materi

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Polycrystalline Ni-Mn-Ga ferromagnetic shape-memory thin films have been deposited on Si (100) substrates using a direct-current magnetron sputtering technique. The microstructure and the temperature dependence of magnetic properties of the films have been investigated by x-ray diffraction, scanning electron microscopy, and thermomagnetic measurements. As-deposited Ni 50.2 Mn 30.6 Ga 19.2 film showed quasi-amorphous structure with paramagnetic nature at room temperature. When annealed at 873 K, the quasi-amorphous film attained crystallinity and possessed L2 1 cubic ordering with high magnetic transition temperature. Saturation magnetization and coercivity values for the annealed film were found to be 220 emu/cm 3 and 70 Oe, respectively, indicating soft ferromagnetic character with low magnetocrystalline anisotropy. The magnetic transitions of the film deposited at 100 W were above room temperature, making this a potential candidate for use in microelectromechanical system devices.

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“…Recently, many groups have reported the production of magnetocaloric thin films such as La 1-x Ca x MnO 3 [8], NiMnGa [9,10], FePt [11], Gd 5 Si 2.09 Ge 1.91 [12], Gd [13,14], etc., by different processing techniques and on different substrates, always aiming the tuning of the magnetocaloric effect. Materials of the R 5 (Si,Ge) 4 family, where R=rare earth, in particular the compounds based on gadolinium and terbium, with a Si/Ge ratio of one, have gained interest due to their giant magnetocaloric effect (GMCE) [15,16].…”

Section: Introductionmentioning

confidence: 99%