Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope

Kaestner, B.; Schönjahn, C.; Humphreys, C. J.

doi:10.1063/1.1689755

Cited by 19 publications

(25 citation statements)

References 15 publications

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“…The first demonstration was reported by Chang and Nixon, revealing a measurable change in the secondary electron yield across a p-n junction3. Later, Kaetsner et al 4. used SEM to report on a direct observation of the potential variations inside a 90 nm GaAs channel5, and Li et al .…”

mentioning

confidence: 99%

Location and Visualization of Working p-n and/or n-p Junctions by XPS

Çopuroğlu

Çalışkan

Sezen

et al. 2016

Sci Rep

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X-ray photoelectron spectroscopy (XPS) is used to follow some of the electrical properties of a segmented silicon photodetector, fabricated in a p-n-p configuration, during operation under various biasing configurations. Mapping of the binding energy position of Si2p reveals the shift in the position of the junctions with respect to the polarity of the DC bias applied. Use of squared and triangular shaped wave excitations, while recording XPS data, allows tapping different electrical properties of the device under normal operational conditions, as well as after exposing parts of it to harsh physical and chemical treatments. Unique and chemically specific electrical information can be gained with this noninvasive approach which can be useful especially for localized device characterization and failure analyses.

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mentioning

confidence: 99%

Location and Visualization of Working p-n and/or n-p Junctions by XPS

Çopuroğlu

Çalışkan

Sezen

et al. 2016

Sci Rep

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“…Although contrast mechanisms for the SE collection are undoubtedly due to multiple factors, and are not fully understood, they have been shown to include an influence of the surface potential [12][13][14]. By collecting images for varying values of Vrev, the change in surface potential with Vrev can be identified.…”

Section: Resultsmentioning

confidence: 99%

Diffused junctions in multicrystalline silicon solar cells studied by complementary scanning probe microscopy and scanning electron microscopy techniques

Heath

Jiang

Al‐Jassim

2010

2010 35th IEEE Photovoltaic Specialists Conference

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The junction location in textured n + -p multicrystalline Si solar cell devices is quantitatively located. A comprehensive comparison is presented between secondary ion mass spectrometry (SIMS) and three microscopy techniques: scanning capacitance microscopy (SCM), scanning Kelvin probe microscopy (SKPM), and secondary electron contrast (SE) in the scanning electron microscope. The comparison includes capabilities of junction allocation, applicability of the measurement to give a two-dimensional analysis of a textured device, apparent imaging of the depletion region, depletion edge and depletion width determination, sample structure requirements for the specific methods, ease of sample preparation, and data acquisition time for high-quality measurements. We find that SE not only allows the most straightforward sample preparation and provides the quickest measurement, but also seems to show the depletion edge and width with a high degree of accuracy. This is verified by a comparison to PC1D simulations of the band bending in the bulk of the device. These data also contribute to our understanding of the origin of SE doping contrast. SKPM provides reliable junction identification but poor capability in determining the depletion width. All three techniques are able to show how well the diffused n + emitter region tracks the surface topography, with SCM and SE yielding the clearest images.

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“…It was shown that the emission sensitivity to the material work function can be used to obtain electrostatic potential distribution inside doped semiconductor devices. 1 A higher spatial resolution, though, can be achieved in a transmission electron microscope ͑TEM͒ using off-axis electron holography. 2 With this method, a two-dimensional potential distribution inside a 0.18 m transistor was shown.…”

Section: Introductionmentioning

confidence: 99%

Measuring interface electrostatic potential and surface charge in a scanning electron microscope

Sychugov

Nakayama

Mitsuishi

2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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A novel method for electrostatic potential measurements at the interface is described. It involves placing a two-dimensional grid below the sample and observing it in a scanning electron microscope. Primary electron beam displacement, caused by surface charges, can be then measured for every grid knot. Using geometric parameters of the setup, a quantitative mapping of the potential can be extracted. It is shown that this method can achieve a tens of millivolt sensitivity and a submicron spatial resolution in electrostatic potential measurements.

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Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope

Cited by 19 publications

References 15 publications

Location and Visualization of Working p-n and/or n-p Junctions by XPS

Location and Visualization of Working p-n and/or n-p Junctions by XPS

Diffused junctions in multicrystalline silicon solar cells studied by complementary scanning probe microscopy and scanning electron microscopy techniques

Measuring interface electrostatic potential and surface charge in a scanning electron microscope

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