2013
DOI: 10.1073/pnas.1310036110
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Mapping strain rate dependence of dislocation-defect interactions by atomistic simulations

Abstract: Probing the mechanisms of defect-defect interactions at strain rates lower than 10 6 s −1 is an unresolved challenge to date to molecular dynamics (MD) techniques. Here we propose an original atomistic approach based on transition state theory and the concept of a strain-dependent effective activation barrier that is capable of simulating the kinetics of dislocation-defect interactions at virtually any strain rate, exemplified within 10 −7 to 10 7 s −1 . We apply this approach to the problem of an edge disloca… Show more

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Cited by 102 publications
(61 citation statements)
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References 49 publications
(78 reference statements)
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“…We note that the MAMD method follows the conventional MD procedures and cannot account for processes whose transition times exceed microseconds. Recently, a collection of algorithms including the potential energy surface sampling method has been successfully employed to assess the mechanical behavior of a nanopillar under strain rate from 1 to 10 8 s −1 (Fan et al, 2013;Yan et al, 2015;Yan and Sharma, 2016). This algorithm can be adopted by the MAMD method, which is under future investigation.…”
Section: Basic Assumptionsmentioning
confidence: 99%
“…We note that the MAMD method follows the conventional MD procedures and cannot account for processes whose transition times exceed microseconds. Recently, a collection of algorithms including the potential energy surface sampling method has been successfully employed to assess the mechanical behavior of a nanopillar under strain rate from 1 to 10 8 s −1 (Fan et al, 2013;Yan et al, 2015;Yan and Sharma, 2016). This algorithm can be adopted by the MAMD method, which is under future investigation.…”
Section: Basic Assumptionsmentioning
confidence: 99%
“…T he mechanical deformation of crystalline materials is governed by structural defects [1][2][3][4] , which are defined as the topological deviations from lattice periodicity. However, in amorphous materials, for example, metallic glasses, the topology of atomic connectivity varies locally and it is not obvious if the defects can be uniquely defined, even though a number of defect mechanisms of deformation have been proposed, including the concept of shear transformation zones (STZ; refs 5,6).…”
mentioning
confidence: 99%
“…Therefore, temperature and loading rate can significantly influence the evolution of the atomic rearrangement of different types of atoms. On the other hand, a similar effect of temperature and loading rate on flow stress has also been observed in crystalline solids where dislocation nucleation and mobility play important roles in plastic deformation [47][48][49]. This indicates that temperature and loading rate might have a common effect on the mechanical properties of both disordered solids and crystalline counterparts.…”
Section: Discussionmentioning
confidence: 60%