Mapping strain fields in ultrathin bonded Si wafers by x-ray scattering

Abstract

X-ray scattering reveals the atomic displacements arising from rotational misalignment in ultrathin silicon bonded wafers. For a 4.3 nm top wafer, the strain field penetrates from the bonded interface to the surface and produces distinctive finite-size oscillations in x-ray data. Analytical calculations permit the atomic displacements throughout the thin top wafer to be modeled.

Soliton staircases and standing strain waves in confined colloidal crystals

“…Boundary-induced strain fields are a commonly observed phenomenon, e.g. for quantum dot superlattices [15], lattice mismatched fused GaAs/InP wafers [16], Ge x Si (1−x) /Si heterostructures [17] and rotationally misaligned Si wafers covalently bonded together [18]. In the last case, a careful X-ray analysis did reveal a periodic displacement pattern, qualitatively similar to the findings we shall report below.…”

Highly ordered germanium nanostructures grown by molecular beam epitaxy on twist-bonded silicon (001) substrates

“…In this work, we investigated germanium deposition on silicon-bonded (0 0 1) substrates with a twist angle as high as 201. For such high twist angles, the strain field generated by the twist dislocation network is negligible because the distance between two dislocations is less than 1 nm [7]. Nevertheless, due to the tilt disorientation between the two-bonded surfaces, a regular linear network of mixed dislocation lines is generated at the interface.…”

Buried hydrophobic silicon bonding studied by high-energy x-ray reflectivity

“…X-ray techniques like grazing incidence diffraction [4] or x-ray scattering 4 Université Joseph Fourier (Grenoble-I), France. [5,6] allow to probe the sample on a large area and on a non-destructive way, and give relevant information on the surface and the interface of the sample. An alternative complementary method consists in using high-energy x-ray reflectivity (HEXRR) [7] which focus on the deeply buried bonding interface.…”