2017
DOI: 10.1063/1.4976562
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Mapping of the resistance of a superconducting transition edge sensor as a function of temperature, current, and applied magnetic field

Abstract: We have measured the resistance R(T, I, Bext) of a superconducting transition edge sensor over the entire transition region on a fine scale, producing a 4-dimensional map of the resistance surface. The dimensionless temperature and current sensitivities (α≡∂logR/∂logT|Iandβ≡∂logR/∂logI|T) of the TES resistance have been determined at each point. α and β are closely related to the sensor performance, but show a great deal of complex, large amplitude fine structure over large portions of the surface that is sens… Show more

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Cited by 13 publications
(9 citation statements)
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References 20 publications
(25 reference statements)
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“…This is partially due to the fact that the proximity effects discussed in Section 2.1 are strongly dependent on the device geometry, the transmissivity of the leads-TES interface and other parameters of the SNS structures, such as T c , and coherence length. In a series of very detailed experiments, it was shown, by Smith et al [34,110] and in later works [76,111], how the normal metal structures added to the TES, including the thermal coupling stems between TES and absorber, could dramatically change the resistive transitions shape and the current flow [112], as a complex interplay of proximity effects, non-equilibrium superconductivity, and self-induced magnetic field. An improved TES design was highly desired, in particular because the dc bias multiplexing schemes do not allow a single pixel bias optimization.…”
Section: Biasmentioning
confidence: 99%
“…This is partially due to the fact that the proximity effects discussed in Section 2.1 are strongly dependent on the device geometry, the transmissivity of the leads-TES interface and other parameters of the SNS structures, such as T c , and coherence length. In a series of very detailed experiments, it was shown, by Smith et al [34,110] and in later works [76,111], how the normal metal structures added to the TES, including the thermal coupling stems between TES and absorber, could dramatically change the resistive transitions shape and the current flow [112], as a complex interplay of proximity effects, non-equilibrium superconductivity, and self-induced magnetic field. An improved TES design was highly desired, in particular because the dc bias multiplexing schemes do not allow a single pixel bias optimization.…”
Section: Biasmentioning
confidence: 99%
“…The agreement is reasonably good for R TES > 0.3 R N . There is some scatter at small R TES /R N , but there is a great deal of structure in the derivatives there due to the interaction of self-generated B-fields and the weak-link oscillations, and these get smoothed over by the finite spacing of the IV curves, which were less densely sampled than in reference [7].…”
Section: α and β Measurements: Comparing Methodsmentioning
confidence: 94%
“…The temperature sensitivity α and current sensitivity β can be calculated from sufficiently densely-measured IV curves using measured G values to estimate the TES temperature at each point, making the necessary interpolations, and taking ratios of appropriate differences as described in reference [7]. Alternatively, we can derive α and β from fits to the complex admittance function, A(f), taken at a single operating point.…”
Section: α and β Measurements: Comparing Methodsmentioning
confidence: 99%
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“…The sensitivity to parallel magnetic fields is much smaller primarily due to the reduced cross section in this direction [15]. For perpendicular fields, only a few μT is enough to have significant impact on the individual device performance [16]. When looking at the full-array level, spatial variations of the magnetic field could be even more detrimental.…”
Section: Introductionmentioning
confidence: 99%