“…This is partially due to the fact that the proximity effects discussed in Section 2.1 are strongly dependent on the device geometry, the transmissivity of the leads-TES interface and other parameters of the SNS structures, such as T c , and coherence length. In a series of very detailed experiments, it was shown, by Smith et al [34,110] and in later works [76,111], how the normal metal structures added to the TES, including the thermal coupling stems between TES and absorber, could dramatically change the resistive transitions shape and the current flow [112], as a complex interplay of proximity effects, non-equilibrium superconductivity, and self-induced magnetic field. An improved TES design was highly desired, in particular because the dc bias multiplexing schemes do not allow a single pixel bias optimization.…”