Mapping of non-radiative point defect distributions in semiconductors using scanning DLTS

Abstract

Knowledge 01 the excited area is t h e basic requirement for reliable quantitative interpretation of SDLTS experiments. The dependence of the spatial resolution of SDLTS experiments on experimental parameters is realistically calculated for the case of minority carrier trapping within a Schottky diode. The resolution is shown to continuously degrade with increasing excitation intensity but can be optimised using a 'pulse width scan' procedure. Such a procedure and other special investigations can easily be performed by using a specialised SDLTS unit now available.