Mapping of magnetic anisotropy in strained ferromagnetic semiconductor GaMnAs films

Abstract

The effect of strain on the magnetic anisotropy of GaMnAs films has been systematically investigated using Hall effect measurements. The magnitude of the strain, which was caused by differences in the lattice constant between the GaMnAs film and buffer layer, was controlled by adjustment of the alloy composition in the GaInAs buffer layer. The in-plane and out-of-plane components of the magnetic anisotropy were obtained from the angular dependence of the planar Hall resistance and the anomalous Hall resistance, respectively. The anisotropy constants obtained allow us to construct a three-dimensional magnetic free energy surface, which provides a clear understanding of the transition behavior of the magnetization between the in-plane and out-of-plane direction in the GaMnAs films.

Ferromagnetic resonance and control of magnetic anisotropy by epitaxial strain in the ferromagnetic semiconductor (Ga0.8,Fe0.2)Goel1, Anh2, Ohya3 et al. 2019Phys. Rev. B293130View full textAdd to dashboardCite

“…Understanding and controlling the MA, thus, are essential for device applications of (Ga,Fe)Sb. In the past, researchers successfully observed and controlled the MA of the III-V Mn-doped FMSs, (Ga,Mn)As [20]- [27] and (In,Mn)As [29]- [31] ferromagnetic thin films, by epitaxial strain.…”

Spacer-thickness dependence of interlayer exchange coupling in GaMnAs/InGaAs/GaMnAs trilayers grown on ZnCdSe buffers

“…The use of InGaAs spacer layer ensures out-of-plane magnetic easy axis in both GaMnAs layers. 20 The structure schematic is shown in the inset of Fig. 1.…”

Magnetoelastic coupling induced magnetic anisotropy in Co2(Fe/Mn)Si thin films

“…A consequence of the strain related anisotropy is the rotation of magnetic easy axes from in-plane to out-of-plane configuration or vice versa. [21][22][23][24] While the strain dependence of in-plane anisotropy has been reported for Co 2 FeAl/MgO thin films, 17 the strain driven out-of-plane anisotropy in Heusler alloy films requires more attention.…”