Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy

Brahlek, Matthew; Zhang, Lei; Zhang, Haitian; Lapano, Jason; Dedon, Liv R.; Martin, Lane W.; Engel‐Herbert, Roman

doi:10.1063/1.4962388

Cited by 25 publications

(15 citation statements)

References 39 publications

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“…To date, the highest quality SVO films have been demonstrated via hybrid molecular beam epitaxy (hMBE), where vanadium is supplied by a metal‐organic precursor and strontium by a conventional thermal source . In hMBE, by carefully calibrating the growth parameters, a self‐limiting growth window can be obtained, which provides the ultimate route for precise stoichiometry …”

Section: Transport Properties Of the Sample With The Highest Rrr Valumentioning

confidence: 99%

Scalable Synthesis of the Transparent Conductive Oxide SrVO₃

Shoham

Baskin

Han

et al. 2019

Adv Elect Materials

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as a TCO. [1-3] This material is superior in conductivity to ITO, [1] and it is composed of abundant elements. In addition to its potential as a TCO, SVO constitutes the metallic endmember of several Mott-insulating systems such as La 1−x Sr x VO 3. [4-6] These systems attract interest both for their fundamental physics [7] and their potential for novel types of Mott-electronics. [8,9] It is therefore highly desirable to synthesize high quality films of this material, in order to unlock its full potential as TCO and to allow access to its interesting fundamental physics without the masking of high defect concentrations. To date, the highest quality SVO films have been demonstrated via hybrid molecular beam epitaxy (hMBE), where vanadium is supplied by a metal-organic precursor and strontium by a conventional thermal source. [10-12] In hMBE, by carefully calibrating the growth parameters, a self-limiting growth window can be obtained, [11,13-17] which provides the ultimate route for precise stoichiometry. [18] The lattice constant of epitaxial oxides provides a sensitive probe of their order and stoichiometry. [19] In addition, for many conductive oxides the residual resistivity ratio, RRR, is the most accurate probe, [20] since its sensitivity to defects far exceeds that of most structural and chemical analyses. RRR is the ratio between the room temperature and low temperature (2-5 K) resistivity. Based on Matthiessen's rule, RRR gauges the relative scattering by lattice defects versus the phonon scattering, and high values attest to the quality of the crystal structure and accuracy of the stoichiometry. The hMBE examples above have consistently reported RRR values exceeding 200, demonstrating the unrivaled accuracy of properly calibrated hMBE. Recently, significant efforts have been applied to understand and optimize the pulsed laser deposition (PLD) and growth kinetics of SVO, [21] with a record RRR value of 11.5. [3] While hMBE and PLD can be used to grow epitaxial oxides on conventional semiconductors, [22-25] an insulating interfacial layer forms at the contact with the semiconductor, preventing efficient charge collection from the substrate. Conventional molecular beam epitaxy (MBE) is the only method to date to allow atomically abrupt epitaxial interfaces between conducting oxides and conventional semiconductors such as Si and GaAs. [26] Such abrupt interfaces are crucial for efficient transport of charge across the interface. [27-29] Furthermore, MBE is a scalable method that is being used by the industry The correlated metal SrVO 3 is an attractive earth-abundant transparent conducting oxide (TCO), a critical component of many optoelectronic and renewable energy devices. A key challenge is to synthesize films with low resistivity, due to the prevalence of defects that cause electron scattering. In addition to the material's promise as a TCO, its interesting correlated-electron physics is often obscured by a high defect concentration, which inhibits its further development into new types of devices. A rou...

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Section: Transport Properties Of the Sample With The Highest Rrr Valumentioning

confidence: 99%

Scalable Synthesis of the Transparent Conductive Oxide SrVO₃

Shoham

Baskin

Han

et al. 2019

Adv Elect Materials

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show abstract

“…The low defect density achieved in SrVO 3 films grown of hMBE films have resulted in RRR values larger than 220, with a low temperature resistivity ∼0.1 µΩ cm, and a room temperature resistivity of ∼20 µΩ cm. [160] An adsorption controlled growth window was accessed for SrVO 3 , [161] CaVO 3 , [162] and LaVO 3 , [163,164] and recently even for the quaternary compound La 1−x Sr x VO 3 , [165] in which defect concentrations were found minimal and physical properties were independent of growth conditions, offering the possibility of reliable, and scalable growth.…”

Section: Thin-film Growth Of Avo 3 Perovskitesmentioning

confidence: 99%

Opportunities in vanadium-based strongly correlated electron systems

et al. 2017

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“…Among them, metallic bulk SrVO 3 (SVO) is a normal Fermi liquid,, as it undergoes a Metal to Insulator Mott transition with thickness reduction of few unit cells,, which is still under debates and motivates many SVO‐based heterostructure's studies ,. SVO appears also as a promising candidate in functional oxide electronics and was shown to be useful for metallic electrode applications in oxide heterostructures,, for anodes in solid oxide fuel cells,, and particularly as a transparent conducting oxide (TCO) electrode ,. Nevertheless the surface of SVO is more sensitive to oxygen,, than other perovskite oxides such as SrRuO 3 .…”

Section: Introductionmentioning

confidence: 99%

Surface Characterizations and Selective Etching of Sr‐Rich Segregation on Top of SrVO₃ Thin‐Films Grown by Pulsed Laser Deposition

et al. 2019

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Since SrVO3 (SVO) can be used as a highly conductive material for perovskite heterostructures, the control of surface morphology and chemistry of such thin‐films are essential. Using pulsed laser deposition, two distinct topographies can be produced. Thus, by tuning oxygen pressure in the growth chamber during cooling, smooth or partially covered by self‐oriented Sr3V2O8 nanorods surfaces can be grown. This study manages to correlate the two typical topographies, revealed by atomic force microscopy (AFM), with their chemical compositions obtained by X‐ray photoelectron spectroscopy (XPS). At first, a model describes their initial surface chemistry through the Sr/V cationic ratio and the (Sr+V)/Oox ratio. Furthermore, using sputter‐depth profiling, post‐thermal treatments and wet chemical etching, SVO thin‐film chemical compositions are extensively studied. We demonstrate that they are composed of stoichiometric SVO phase covered by Sr‐rich layer on top. Finally, treatment in water for 180 seconds helps to remove Sr‐rich phases. Sr3V2O8 nanorods are found selectively dissolved leaving a surface nano‐imprint. Moreover, on smooth SVO surfaces, a balanced Sr/V cationic ratio of 1.0±0.1 is obtained. These results appear very promising for SVO thin‐films surface preparation and further development as electrodes for electronic devices.

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Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy

Cited by 25 publications

References 39 publications

Scalable Synthesis of the Transparent Conductive Oxide SrVO₃

Scalable Synthesis of the Transparent Conductive Oxide SrVO₃

Opportunities in vanadium-based strongly correlated electron systems

Surface Characterizations and Selective Etching of Sr‐Rich Segregation on Top of SrVO₃ Thin‐Films Grown by Pulsed Laser Deposition

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Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy

Cited by 25 publications

References 39 publications

Scalable Synthesis of the Transparent Conductive Oxide SrVO3

Scalable Synthesis of the Transparent Conductive Oxide SrVO3

Opportunities in vanadium-based strongly correlated electron systems

Surface Characterizations and Selective Etching of Sr‐Rich Segregation on Top of SrVO3 Thin‐Films Grown by Pulsed Laser Deposition

Contact Info

Product

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Scalable Synthesis of the Transparent Conductive Oxide SrVO₃

Scalable Synthesis of the Transparent Conductive Oxide SrVO₃

Surface Characterizations and Selective Etching of Sr‐Rich Segregation on Top of SrVO₃ Thin‐Films Grown by Pulsed Laser Deposition