Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor

Physics is the interplay of energy and matter. Energy, in the form of light, interacting with matter, principally in the solid state, underpins this topical review. The subject is developed carefully and methodically, beginning with basic definitions pertaining to terahertz detectors and terahertz radiation, then proceeding systematically to delineate characteristics of terahertz photons and terahertz detectors in more detail. In-between, the intimate connection linking terahertz sensors and terahertz sources is highlighted-an important aspect unfortunately often overlooked or ignored when terahertz detectors are discussed in isolation. At the centre of this topical review are the various physical mechanisms by which electromagnetic radiation of terahertz frequencies interacts with matter. The logic is to present first the underlying physical principles of detection before presenting the practical implementation in a specific device, rather than the other way around. A taxonomy of terahertz detectors is then proposed based on the underlying physical principles of detection. Following on from this classification, stateof-the-art terahertz detectors are surveyed and appraised; this overview constitutes the longest section of the review. Key detector parameters which inform applications are then presented and tabulated. Finally, the present state-of-the-art is anchored within the wider scientific context of historical developments and future prospects.

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“…A common system to realize TeraFETs is GaN [79][80][81]. The optimization of 0.25 µm GaN FETs has been discussed [82].…”

Section: Terafets (Class B1mentioning

confidence: 99%

A review of terahertz detectors

Lewis

2019

J. Phys. D: Appl. Phys.

176

101

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“…At room temperature, the forbidden band width of Si is 1.12 eV, and that of Ge is 0.66 eV. The difference of the forbidden band width can effectively reduce the barrier height of the space charge region, improve the injection ratio 11 ,and promote the diffusion of carriers to the intrinsic region. In addition, the close lattice constants of Si and Ge also greatly improve the performance of heterojunction SPiN diodes.…”

Section: Introductionmentioning

confidence: 99%

Design of reconfigurable antenna based on Si/Ge/Si Heterogeneous SPiN diodes

Liu

2023

Sixth International Conference on Intelligent Computing, Communication, and Devices (ICCD 2023)

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Aiming at the problems of low integration, inflexible performance reconstruction and poor stealth performance of traditional metal antenna systems, a reconfigurable antenna is designed by using Si/Ge/Si hetero-SPiN diodes. When the forward voltage is applied on the SPiN diode, the carrier concentration in the intrinsic region is high, and solid-state plasma area is formed, which has metallic characteristics. When the diode is off, it is equivalent to a dielectric and can’t respond to external electromagnetic waves. The generation and annihilation of solid-state plasma is controlled by tuning the applied voltage of different parts of the hetero-SPiN diodes, which realize reconfigurability of antenna performance.

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Photoconductive Antennas for Terahertz Applications

Lewis

2022

Photoconductivity and Photoconductive Materials

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Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor

Abstract: Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor *Lü Li(吕利) a)b) , Sun Jian-Dong(孙建东) a) † , Roger A. Lewis c) , Sun Yun-Fei(孙云飞) d) , Wu Dong-Min(吴东岷) a)d) , Cai Yong(蔡勇) a) , and Qin Hua(秦华) a) ‡

Cited by 8 publications

References 20 publications

A review of terahertz detectors

A review of terahertz detectors

Design of reconfigurable antenna based on Si/Ge/Si Heterogeneous SPiN diodes

Photoconductive Antennas for Terahertz Applications

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