Many-Body Effect and Device Performance Limit of Monolayer InSe

Abstract

Due to a higher environmental stability than few-layer black phosphorus and a higher carrier mobility than few-layer dichalcogenides, two-dimensional (2D) semiconductor InSe has become quite a promising channel material for the next-generation field-effect transistors (FETs). Here, we provide the investigation of the many-body effect and transistor performance scaling of monolayer (ML) InSe based on ab initio GW-Bethe-Salpeter equation approaches and quantum transport simulations, respectively. The fundamental band gap of ML InSe is indirect and 2.60 eV. The optical band gap of ML InSe is 2.50 eV for the in-plane polarized light, with the corresponding exciton binding energy of 0.58 eV. The ML InSe metal oxide semiconductor FETs (MOSFETs) show excellent performances with reduced short-channel effects. The on-current, delay time, and dynamic power indicator of the optimized n- and p-type ML InSe MOSFETs can satisfy the high-performance and low-power requirements of the International Technology Roadmap for Semiconductors 2013 both down to 3-5 nm gate length in the ballistic limit. Therefore, a new avenue is opened to continue Moore's law down to 3 nm by utilizing 2D InSe.

Scaling law of hydrogen evolution reaction for InSe monolayer with 3d transition metals doping and strain engineering

“…The results indicate that InSe monolayer is an indirect band-gap semiconductor (2.1 eV) with the valence band maximum (VBM) existing in between and K points. This is in good agreement with previous literatures [33][34][35] . Moreover, Zn-doped InSe monolayer is also semiconducting with an indirect band gap of 2.2 eV which is slightly larger than that of un-doped InSe monolayer.…”

Potential 2D Materials with Phase Transitions: Structure, Synthesis, and Device Applications

“…Intense academic and industrial interest has been focused on 2D materials because of the planar structure, unique properties, and potential device applications . For example, 2D semiconductors with high carrier mobility and moderate bandgap can overcome the short channel effect, and then can scale down transistors to sub‐10 nm and even sub‐5 nm to extend the Moore's law. Over last decades, typical 2D semiconductors, such as MoS 2 and WSe 2 , have been intensively studied .…”

Hole-Doped 2D InSe for Spintronic Applications

“…Thus, ongoing research is focusing on other 2D systems, like group-III mono-chalcogenides (e.g. GaS, GaSe, and InSe) [9,10,11,12,13,14,15,16,17,18].…”