Manufacturing-oriented developments of silicon multiplexers for multielement IR photodetectors

Kozlov, A. I.; Marchishin, I. V.

doi:10.3103/s8756699012040073

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Part I the High-precision Process Of Butt-joining Silicon C1

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Cited by 2 publications

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“…Based on an analysis of the construction principles of the photosignal-counting circuits of multielement photodetectors, 17 an SM design has been developed that allows the silicon chips of submodules of arbitrary format to be butt-joined in mosaic MBDAs (Fig. 6).…”

Section: Part I the High-precision Process Of Butt-joining Silicon Cmentioning

confidence: 99%

Image conversion in uncooled mosaic microbolometer detectors for the IR and terahertz regions with a format up to 3072 × 576 or more

et al. 2014

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This paper discusses the process-design principles for creating hyperlarge-format mosaic photodetectors (MPDs), based on the butt-joining process of silicon chips with uncooled small-format microbolometer detector arrays (MBDAs). The basic unit is investigated and optimized for the process operations of laser scribing as part of the high-precision butt-joining process of chips in which the process part of the blind zone between the photosensitive edge elements of adjacent MBDA chips has a total size no greater than 30 μm. The design and layout are synthesized for 384 × 288-format silicon multiplexers, from which a 3072 × 576-format MPD fabricated using the butt-joining process developed here can provide better than 99% image-conversion efficiency for IR microbolometers and up to 100% for terahertz-range microbolometers.

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Section: Part I the High-precision Process Of Butt-joining Silicon Cmentioning

confidence: 99%

Image conversion in uncooled mosaic microbolometer detectors for the IR and terahertz regions with a format up to 3072 × 576 or more

et al. 2014

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Comparative analysis of specifications for HgCdTe photodiode-based infrared photodetectors and for GaAs/AlGaAs quantum-well photodetectors

2016

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Manufacturing-oriented developments of silicon multiplexers for multielement IR photodetectors

Cited by 2 publications

References 7 publications

Image conversion in uncooled mosaic microbolometer detectors for the IR and terahertz regions with a format up to 3072 × 576 or more

Image conversion in uncooled mosaic microbolometer detectors for the IR and terahertz regions with a format up to 3072 × 576 or more

Comparative analysis of specifications for HgCdTe photodiode-based infrared photodetectors and for GaAs/AlGaAs quantum-well photodetectors

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