Manufacturing of ArF chromeless hard shifter for 65-nm technology

Park, Keuntaek; Dieu, Laurent; Hughes, Greg; Green, Kent G.; Croffie, Ebo H.; Taravade, Kunal N.

doi:10.1117/12.518252

Cited by 2 publications

(2 citation statements)

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“…Figure 4a and Figure 4b show a cross section of altPSM mask and crlPSM grating structure mask, respectively. The 180 degree phase etch depth is achieved by multiple iteration of quartz dry etch for phase and defect control [6]. The constant etched uniform background of the crlPSM structures allows for self aligned processes to be used during the multiple quartz etch, whereas the altPSM requires critical laser write overlay steps to do the quartz etch.…”

Section: Mask Processing and Costmentioning

confidence: 99%

Analysis of etched quartz solutions for 65-nm node critical layer lithography

Croffie¹,

Callan²

2003

SPIE Proceedings

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Manufacturability and economical viability of etched quartz solutions for 65nm node critical layer lithography is assessed through evaluation of mask technology conversion complexity, mask process complexity, wafer processing cost and SRAM cell critical layer lithography performance. The etched quartz technologies under consideration are the full-layout alternating phase shift mask solution (FullPhase altPSM) and chromeless hard shifter phase shift mask solution (crlPSM). Using 0.63 NA exposures, we achieve k 1 =0.29 (DOF=0.6µm) and k 1 =0.33 (DOF=0.8µm) for altPSM and crlPSM, respectively. 60nm isolated feature DOF is more than 0.8µm for altPSM. The crlPSM isolated feature DOF without sub resolution assist features is about 0.3µm. Simulations results of crlPSM isolated features with sub resolution assist features using NA=0.75 show that DOF of 0.3µm is attainable for crlPSM. Experimental results are used to calibrate wafer volume cross over model for these competing technologies with specific focus on die size, k 1 and DOF related yield as wafer processing cost drivers. Results show that altPSM has lower wafer processing cost due to better lithography yield at smaller die sizes. Thus, though the mask set of altPSM solution is more expensive than crlPSM, the altPSM solution is more economical for high volume production of 65nm node technologies. The wafer volume crossover model allows for the most cost effective mask solution to be employed for a given logic device and wafer volume expectation.Keywords: Alternating phase shift mask, chromeless phase shift mask, etched quartz, low k 1 , 65 nm lithography, wafer volume crossover model, cost of ownership, PSM 1. ecroffie@lsil.com; 503/618-4248

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Section: Mask Processing and Costmentioning

confidence: 99%

Analysis of etched quartz solutions for 65-nm node critical layer lithography

Croffie¹,

Callan²

2003

SPIE Proceedings

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“…One sample CLPSM photomask was provided to verify the validity of the simulation. 5 The 180 degrees etch was performed by three iterative dry etch processes. Various mesa and trench type patterns have been used to evaluate the optimum contrast.…”

Section: Introductionmentioning

confidence: 99%

Simulation of quartz phase etch affect on performance of ArF chrome-less hard shifter for 65-nm technology

et al. 2005

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The Cr-less Phase Shift Mask (CLPSM) has been considered as one of the most practical resolution enhancement techniques (RET) solution providing low Mask Error Enhancement Factor (MEEF) for low k1 geometries for memory and logic semiconductor devices. There are several papers that show the advantages of the CLPSM compared to the other types of RET. Also the required design changes have been widely studied. Manufacturing of CLPSM requires quartz etching additionally to the COG mask process. Contrary to CLPSM, the required characteristics of the quartz etching process for altPSM are well specified. However, the required quality of the etching process for the CLPSM has not been sufficiently evaluated yet. In this paper, the impact of imperfections of the mask manufacturing process, like the effect of quartz sidewall profile, etch depth deviation and quartz trenching during quartz dry etching on mask imaging performance is investigated. Simulations were performed using Solid-CTM to investigate these effects for both mesa and trench type CLPSM for different pitches. A CLPSM mask was manufactured at AMTC to confirm the validity of the simulation through comparing the contrast deviation on various mesa and trench sizes. AIMS measurements have been performed for this purpose.

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Manufacturing of ArF chromeless hard shifter for 65-nm technology

Cited by 2 publications

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Analysis of etched quartz solutions for 65-nm node critical layer lithography

Analysis of etched quartz solutions for 65-nm node critical layer lithography

Simulation of quartz phase etch affect on performance of ArF chrome-less hard shifter for 65-nm technology

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