Manufacturing of &amp;#x2018;ink based&amp;#x2019; CIGS solar cells/modules

Kapur, V. K.; Kemmerle, Richard; Bansal, Ashish; Haber, Joel A.; Schmitzberger, Jurg; Le, Phucan; Guevarra, Dan; Kapur, V.K.; Stempien, Tim

doi:10.1109/pvsc.2008.4922496

Cited by 10 publications

(6 citation statements)

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“…With respect to the precursor conversion step employed by all successful non‐vacuum CIGS deposition techniques, the hydrazine approach has the advantage that it requires only heating. In contrast, the particulate and electrodeposited precursors require annealing with a chalcogen source and in one case an additional reduction step 152. However, deposition of the hydrazine precursors requires an inert atmosphere, which may be restrictive on an industrial scale and therefore no process yet has a clear technical advantage.…”

Section: Discussionmentioning

confidence: 99%

“…This leads to low open circuit voltages that a suggested sulphurization step using H 2 S/N 2 might improve if the segregation of Ga towards the rear of the absorbers cannot be prevented 150,152. Despite some evidence of carbon contamination, presumably from additives included in the ink, this method has demonstrated homogeneous cell efficiencies above 10% across 90 cm 2 flexible substrates 152.…”

Section: Particulate Processes For Cigs Depositionmentioning

confidence: 99%

“…The improvement in efficiency of these devices relative to the best cells selenized directly from oxide particulates arises from a large increase in fill factor. Segregation of Ga to the back contact is an issue for this method 152, just as it is for selenization of vacuum deposited Cu‐In‐Ga alloys 153. This leads to low open circuit voltages that a suggested sulphurization step using H 2 S/N 2 might improve if the segregation of Ga towards the rear of the absorbers cannot be prevented 150,152.…”

Section: Particulate Processes For Cigs Depositionmentioning

confidence: 99%

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Non‐vacuum methods for formation of Cu(In, Ga)(Se, S)₂ thin film photovoltaic absorbers

Hibberd

Chassaing

Liu³

et al. 2010

Progress in Photovoltaics

320

196

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Polycrystalline thin films of copper indium diselenide and its alloys with gallium and sulphur (CIGS) have proven to be suitable for use as absorbers in high-efficiency solar cells. Record efficiency devices of 20% power conversion efficiency have been produced by co-evaporation of the elements under high vacuum. However, non-vacuum methods for absorber deposition promise significantly lower capital expenditure and reduced materials costs, and have been used to produce devices with efficiencies of up to 14%. Such efficiencies are already high enough for commercial up-scaling to be considered and several companies are now trying to develop products based on non-vacuum deposited CIGS absorbers. This article will review the wide range of non-vacuum techniques that have been used to deposit CIGS thin films, highlighting the state of the art and efforts towards commercialization.

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Section: Discussionmentioning

confidence: 99%

Section: Particulate Processes For Cigs Depositionmentioning

confidence: 99%

Section: Particulate Processes For Cigs Depositionmentioning

confidence: 99%

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Non‐vacuum methods for formation of Cu(In, Ga)(Se, S)₂ thin film photovoltaic absorbers

Hibberd

Chassaing

Liu³

et al. 2010

Progress in Photovoltaics

320

196

View full text Add to dashboard Cite

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“…Previous work, based on a printing method, has shown the potential of non‐vacuum methods by yielding up to 14.5% efficient solar cells from nanoparticle inks . Production, stabilization, and toxicity of the nanoparticles, as well as their reduction and conversion, often involving explosive and/or toxic gases such as H 2 or H 2 Se, have to be managed.…”

Section: Introductionmentioning

confidence: 99%

Non‐vacuum deposition of Cu(In,Ga)Se₂ absorber layers from binder free, alcohol solutions

Uhl

Fella

Chirilă

et al. 2012

Progress in Photovoltaics

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Non‐vacuum methods for Cu(In,Ga)Se2 (CIGS) absorber deposition have gained wide interest because of their inherent cost and energy saving potential. Here, a solution‐based processing route for CIGS absorber layers is presented that employs binder‐free solutions of metal salts in non‐toxic, alcohol solvents. Despite the low‐boiling‐point nature of the employed solvents, a residual carbon‐rich layer is observed between the CIGS and metal back contact. Based on comprehensive investigations by scanning electron microscopy, energy‐/wavelength dispersive X‐ray spectroscopy, X‐ray fluorescence, X‐ray diffraction, thermogravimetric analysis, differential thermal analysis, and extended X‐ray absorption fine structure spectroscopy, a formation reaction mechanism through intermediate metal–organic complexes is proposed. In this route, the CIGS layer is formed in selenium atmosphere via a gradual decomposition of the carbon‐rich layer comprising carboxylic chelate complexes of metals. A compositional gradient occurs in the CIGS absorber, whereas a significant amount of metals remains in the carbon‐rich layer. The incorporation of Ga into CIGS is affected by the initial salt concentration and the selenization temperature. Fabricated solar cells exhibit active area efficiencies of up to 7.7% on 0.3 cm2 area without anti‐reflection coating, which is among the highest reported efficiencies for solar cells from a solution process with non‐explosive gases or solvents. Copyright © 2012 John Wiley & Sons, Ltd.

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“…In addition, CIGS solar cells are gaining attention due to their capability to perform under lower irradiance. Photovoltaic researchers have been attracted (Hamri et al (2019)) to CIGS material due to its prominent optoelectronic properties like high absorption co-efficient (10 5 cm −1 ), tunability of bandgap, and a smaller amount of material consumption (Romeo et al 2004, Kapur et al 2008, Nakada 2012, Rampino et al 2012, Fischer et al 2014, Reinhard et al 2014. Variating the indium (In) and gallium (Ga) concentrations in CIGS can control the bandgap, which implies that the bandgap is a direct function of the alloy stoichiometry of the CIGS material.…”

Section: Introductionmentioning

confidence: 99%

Exploration of Cd_1−xZn_xSe as a window layer for CIGS based solar cell with PEDOT: PSS as back surface field layer

Islam,

Rashid,

Akhtaruzzaman

et al. 2023

Mater. Res. Express

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This research investigates the potential of Cd1-xZnxSe thin film for photovoltaic applications. The electrical behavior of CIGS-based solar cells is examined with the novel Cd1-xZnxSe as buffer layer material by Solar Cell Capacitance Simulator (SCAPS). The tunability of Cd1-xZnxSe facilities to reduce the defects between the absorber and buffer layer by determining the ideal conduction band offset. It is revealed that cross-over occurs between the p-type absorber and the metal back contact if the metal work function is below 4.6 eV. In this research, a thin PEDOT: PSS back surface (BSF) layer was integrated which enhances the device efficiency from 22.5 percent to 28.32% while retaining the metal work function at 5.1 eV. The trade-off between the use of metal having a higher work function and the inclusion of a heavily doped BSF layer is one of the important findings of this research. These findings pave the way for Cd1-xZnxSe to be commercially used as a buffer layer material for CIGS solar cells.

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Manufacturing of ‘ink based’ CIGS solar cells/modules

Cited by 10 publications

References 0 publications

Non‐vacuum methods for formation of Cu(In, Ga)(Se, S)₂ thin film photovoltaic absorbers

Non‐vacuum methods for formation of Cu(In, Ga)(Se, S)₂ thin film photovoltaic absorbers

Non‐vacuum deposition of Cu(In,Ga)Se₂ absorber layers from binder free, alcohol solutions

Exploration of Cd_1−xZn_xSe as a window layer for CIGS based solar cell with PEDOT: PSS as back surface field layer

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Manufacturing of &#x2018;ink based&#x2019; CIGS solar cells/modules

Cited by 10 publications

References 0 publications

Non‐vacuum methods for formation of Cu(In, Ga)(Se, S)2 thin film photovoltaic absorbers

Non‐vacuum methods for formation of Cu(In, Ga)(Se, S)2 thin film photovoltaic absorbers

Non‐vacuum deposition of Cu(In,Ga)Se2 absorber layers from binder free, alcohol solutions

Exploration of Cd1−xZnxSe as a window layer for CIGS based solar cell with PEDOT: PSS as back surface field layer

Contact Info

Product

Resources

About

Manufacturing of ‘ink based’ CIGS solar cells/modules

Non‐vacuum methods for formation of Cu(In, Ga)(Se, S)₂ thin film photovoltaic absorbers

Non‐vacuum methods for formation of Cu(In, Ga)(Se, S)₂ thin film photovoltaic absorbers

Non‐vacuum deposition of Cu(In,Ga)Se₂ absorber layers from binder free, alcohol solutions

Exploration of Cd_1−xZn_xSe as a window layer for CIGS based solar cell with PEDOT: PSS as back surface field layer