2007
DOI: 10.1117/12.713393
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Manufacturability issues with double patterning for 50-nm half-pitch single damascene applications using RELACS shrink and corresponding OPC

Abstract: A double patterning (DP) process is discussed for 50nm half pitch interconnects, using a litho-etch-litho-etch approach on metal hard mask (MHM). Since an 0.85NA immersion scanner is used, the small pitch of 100nm is obtained by DP, the small trenches are made by a Quasar exposure followed by a shrink technique. The RELACS ® process is used, realizing narrow trenches with larger DOF and less LER. For mask making, a design split is carried out, followed by adjustments of the basic design to make the patterns mo… Show more

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Cited by 13 publications
(7 citation statements)
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“…One way to compensate for this difference consists of using different OPC features for the different patterns [16]. In ST-DPL, this method is no longer possible since the same mask is used for the first and second exposures.…”
Section: B St-dpl Challenges and Downsidesmentioning
confidence: 99%
“…One way to compensate for this difference consists of using different OPC features for the different patterns [16]. In ST-DPL, this method is no longer possible since the same mask is used for the first and second exposures.…”
Section: B St-dpl Challenges and Downsidesmentioning
confidence: 99%
“…Therefore, the smallest half-pitch of contact holes is limited to ~50nm in the manufacturing process. 1 In order to overcome the theoretical resolution limit, various double patterning schemes were proposed in recent years including self-aligned double patterning (SADP), 2-5 litho-etch-litho-etch (LELE), [5][6][7] and litho-litho-etch (LLE). 8-15 While tool vendors have focused their efforts on SADP and LELE, most resist vendors have supported LLE that requires less process steps and lower cost of ownership than SADP and LELE.…”
Section: Introductionmentioning
confidence: 99%
“…It requires pattern being decomposed into two separate pattern sets, using a litho-etch-litho-etch approach on hard mask [1]. In each of the single exposure step, we can relax the dense pattern pitches by decomposing them into two half-dense ones.…”
Section: Introductionmentioning
confidence: 99%