A class
of septuple-atomic-layer two-dimensional (2D)
materials,
MA2Z4, is sought as an alternative to 2D hexagonal
transition metal dichalcogenides in the fields of valleytronics and
spintronics. In these materials, the structural symmetry can be varied
by changing the stacking of its three parts in the monolayer. We use
first-principles calculations to show that in the Janus monolayer
WSiGeZ4 (Z = N, P, As), Berry curvature and the Rashba
effect are enhanced by modifying the stacking orders. The intrinsic
electric field and composition of the d orbitals
play a dominant role in determining these properties. Berry curvature
is strengthened by up to 300% compared to its ground state through
symmetry control, along with a significant increment in the Rashba
coefficient. Moreover, monolayers WSiGeP4 and WSiGeAs4 have multiple valleys, implying another valley-dimension.
The interesting spin-valley physics tunability in septuple-atomic-layer
2D materials suggests their exceptional potential for spintronic and
valleytronic applications.