2020
DOI: 10.1039/d0tc00003e
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Manipulation of the Rashba effect in layered tellurides MTe (M = Ge, Sn, Pb)

Abstract: Designing an electric-field controlled Rashba spin FET on two-dimensional GeTe.

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Cited by 24 publications
(40 citation statements)
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“…[ 34 ] The energy band with the consideration of SOC are shown in Figures S3 and S4, Supporting Information for type‐A heterostructures and type‐B heterostructures with different thicknesses, respectively. In this paper, the Rashba split around Γ point near Fermi level, which is corresponding to the Rashba split at VBM for the isolated GeTe multilayer, [ 35 ] is selected to analyze the modulation of Rashba effect in the heterostructure. The Rashba coefficient is calculated based on the definition αR=2ERknormalR$\alpha _{\rm R}=\frac{2E_{\rm R}}{k_{\rm R}}$, where E R and k R can be collected from the band structure.…”
Section: Resultsmentioning
confidence: 99%
“…[ 34 ] The energy band with the consideration of SOC are shown in Figures S3 and S4, Supporting Information for type‐A heterostructures and type‐B heterostructures with different thicknesses, respectively. In this paper, the Rashba split around Γ point near Fermi level, which is corresponding to the Rashba split at VBM for the isolated GeTe multilayer, [ 35 ] is selected to analyze the modulation of Rashba effect in the heterostructure. The Rashba coefficient is calculated based on the definition αR=2ERknormalR$\alpha _{\rm R}=\frac{2E_{\rm R}}{k_{\rm R}}$, where E R and k R can be collected from the band structure.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, it indicates MnF4 monolayer might be an intriguing candidate for AFM spintronic applications. Generally, the external stimuli, such as strain and carrier doping, could effectively tune the electronic and magnetic properties of 2D magnetic materials [7,27,[43][44][45]. We displayed the energy difference between AFM and FM states as a function of biaxial strain in Fig.…”
Section: Methodsmentioning
confidence: 99%
“…Ferroelectric Rashba semiconductors have recently created a huge sensation in the field of spintronics owing to their robust spontaneous electrical polarization [1][2][3][4][5][6] . These materials find applications in spin field effect transistors, ferroelectric tunnel junctions, storage and memory devices [7][8][9][10][11][12] . The long-range order dipoles aligned in same direction induce polarization in ferroelectric materials, leading to inversion asymmetry.…”
Section: Introductionmentioning
confidence: 99%
“…Note that SOC and broken inversion symmetry play a pivotal role for the materials to exhibit Rashba and Dresselhaus effect 7,12,25,26 . In crystals, lacking inversion symmetry, a relativistically moving electron experiences a Lorentz-transformed magnetic field due to a finite potential gradient.…”
Section: Introductionmentioning
confidence: 99%