2018
DOI: 10.1016/j.nanoen.2017.11.066
|View full text |Cite
|
Sign up to set email alerts
|

Manipulation of charge transport in ferroelectric-semiconductor hybrid for photoelectrochemical applications

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
27
0

Year Published

2019
2019
2023
2023

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 52 publications
(27 citation statements)
references
References 49 publications
0
27
0
Order By: Relevance
“…The common approaches to realize self‐powered photodetectors are construction of p‐i‐n or Schottky junction, or integrated photoconductor with an energy conversion or harvester unit . Recently, ferroelectric semiconductors have proven to be potential candidates for photoelectric conversion materials because it can be polarized by external electric field and produce a built‐in electric field to separate electron–hole pairs . Thus, it is an alternative way to construct self‐driven photodetector by exploiting polarization‐induced electric filed effects .…”
Section: Introductionmentioning
confidence: 99%
“…The common approaches to realize self‐powered photodetectors are construction of p‐i‐n or Schottky junction, or integrated photoconductor with an energy conversion or harvester unit . Recently, ferroelectric semiconductors have proven to be potential candidates for photoelectric conversion materials because it can be polarized by external electric field and produce a built‐in electric field to separate electron–hole pairs . Thus, it is an alternative way to construct self‐driven photodetector by exploiting polarization‐induced electric filed effects .…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, the selected area electron diffraction image makes known that the main crystal planes of BTO are (100), (110), (111), (211), and (320) (Figure f), but the (200) plane exhibits a tiny scattering, revealing that the crystal plane spacing is split and matched well with the XRD data. Further, we carried out switching spectroscopy piezoresponse force microscopy technique to study the local polarization switching behavior and the local piezoresponse as a function of tip bias . This method is an effective characterization tool to directly observe the statics and dynamics of ferroelectric domains at nanometer scale, including amplitude and phase versus voltage for domain polarization and piezoelectric coefficient on material's surface.…”
mentioning
confidence: 99%
“…The multiplane‐exposed semiconductor combined with ferroelectric is beneficial for charge separation and transfer, so the (100) plane would carry out H 2 evolution, while O 2 evolution would occur at the (111) plane (Figure d). Due to the variable surface potential, the negative and positive charges will be accumulated at the (100) and (111) planes, respectively, creating downward and upward band structures at (100) and (111) planes (Figure e) . As, BTO ferroelectric dipoles are combined with Cu 2 O, which gets polarized by the surface potential gap.…”
mentioning
confidence: 99%
“…To reveal the mechanism of how E dp influences charge separation and transfer process, the schematic diagram of the formation of the E dp is shown in Figure S5 in the Supporting Information. E dp forms opposite to the polarization direction, caused by the charges accumulation on the photoanode surface . Figure b displays schematic band structures of the BFO/LN photoanode after −10, 0, and +10 V poling.…”
Section: Resultsmentioning
confidence: 99%