Manipulating the Light‐Matter Interaction of PtS/MoS₂ p–n Junctions for High Performance Broadband Photodetection

Abstract

Due to the limited carrier concentration, 2D transition metal dichalcogenides have lower intrinsic dark current, and thus, are widely studied for high performance room photodetection. However, the light‐matter interaction is still unclear, thus tuning the photoexcitation and further manipulating the photodetection is a challenge. Herein, large‐area PtS films are synthesized, and the growth mechanism is investigated. It is demonstrated that PtS has an orthorhombic structure and exhibits the p‐type semiconducting behavior. Then, MoS2/PtS p–n heterojunction is fabricated, and its energy diagram is discussed based on the Kelvin probe force microscopy. The contact potential difference is about 160 mV, which is much larger than previous 2D junctions facilitating the charge separation. Furthermore, the phototransistor based on MoS2/PtS p–n heterojunction is prepared, showing broadband photoresponse from visible to near‐infrared. The manipulation of an external field on photoresponse, detectivity, and rise/fall time are explored and discussed. The responsivity can reach up to 25.43 A W−1, and the detectivity is 8.54 × 1012 Jones. These results indicate that PtS film is a prospective candidate for high‐performance optoelectronic devices and broaden the scope of infrared detection materials.

Stable Li+/Na+ Batteries with Anodes Boosted by Hollow Tubular-Structured MoS2 Nanosheet/N-Doped Carbon Nanosheet Composites

“…Because of the uniform C element distribution according to EDS mappings, it is certain that the continuous electronic conductions occur in the whole nanostructure. In the S 2p spectrum (Figure b), two distinct peaks located at 162.2 and 163.8 eV correspond to S 2p 1/2 and S 2p 3/2 , respectively. − Importantly, the peak located at l65.2 eV can be assigned to the S–C bond . Two peaks in the Mo 3d spectrum at 229.1 and 232.4 eV are assigned to Mo 3d 5/2 and Mo 3d 3/2 , respectively (Figure c), which reveal the oxidation state of Mo 4+ , proving the formation of MoS 2 .…”

Paper-based Broadband Flexible Photodetectors with van der Waals materials

“…Rise time (τ on ) is de ned as the time taken to increase the current from 10-90% of its baseline under laser illumination 21 . The fall time (τ off ) is the time required to reduce the current from 90-10% of its baseline 22 . For MoS 2 , the rise and fall times are measured to be 2.17 and 9.99 s, respectively.…”

Enhanced photocatalytic hydrogen production of MoS2 sheet/carbon nanofiber using rapid electron transport of Mo6+ and carbon nanofiber

“…However, the H 2 evolution rate of MS-800 can be up to about four times that of MS, therefore the main reason for the enhanced photocatalytic performance is that the oxidation of the Mo atoms increases the active sites of MoS 2 . 50 The introduction of CNF further reduces the PL intensity and improves the photocatalytic activity, indicating that CNF accelerated the carrier migration and separation efficiency owing to its high conductivity.…”