Manifestations of the deneutralization of mobile charges in SiO2 in the spectroscopy of the silicon-oxide interface

Effect of pressure on the properties of Al-SiO2-n-Si<Ni> structures

“…There exists a number of papers (see, e.g., [3][4][5][6][7]) devoted to investigations of the effect of such external actions as thermal treatment and -irradiation on the parameters of interfaces. As to the effect of pressure, the available works deal predominantly with an analysis of the bulk properties variation in the layers of MOS structures [8][9][10][11].…”