2015
DOI: 10.1134/s1063783415020146
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Manifestation of spin-dependent recombination in afterglow of zinc oxide crystals

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Cited by 4 publications
(9 citation statements)
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“…They are both negative-Ueff center for donating and capturing electrons respectively. Our simple GGA+U calculation shows that the calculated photon emission energy is about 2.34 eV, which is close to the experimentally reported intrinsic phosphor emission photon energy of 2.14 eV (580 nm in wavelength) [48,49]. The Hubbard-U parameter is self-consistently determined through previous established methodology [33,59].…”
Section: Cap Modelsupporting
confidence: 83%
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“…They are both negative-Ueff center for donating and capturing electrons respectively. Our simple GGA+U calculation shows that the calculated photon emission energy is about 2.34 eV, which is close to the experimentally reported intrinsic phosphor emission photon energy of 2.14 eV (580 nm in wavelength) [48,49]. The Hubbard-U parameter is self-consistently determined through previous established methodology [33,59].…”
Section: Cap Modelsupporting
confidence: 83%
“…Later, the hierarchical type ZnO system has the intrinsically wide 567 nm orange emission. It is interesting that, an after-glow (persistent phosphorescence) has also been observed in the ZnO systems reported recently by Baranov et al [48,49], in which the persistent luminescence emission spectrum peak is centering at the energy of 2.2 eV (~580 nm) for photon emissions.…”
Section: Znomentioning
confidence: 62%
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“…Usually, this involves increasing the defect concentration of materials in a packed structure. [84][85][86][87]…”
Section: S-richmentioning
confidence: 99%
“…Usually, sintering is a popular method for increasing the defect concentration by means of increasing the density of materials via a more densely packed structure, which has been reported in other experiments. [76][77][78][79] Another possible way to create neutral pair defects in a state of thermal disequilibrium is by using external stress, which can provide a similar effect to sintering. [80][81][82][83][84] According to the experiment on the persistent luminescence of Er 2 O 3 by Tanner et al, 14 we see that the decay of the emission at 660 nm has a half-life of about 0.25 s, whereas this is about 0.625 s for the decay at 1540 nm.…”
Section: Native Defects-induced Luminescence Propertiesmentioning
confidence: 99%