Majority and minority electron and hole mobilities in heavily doped GaAs

Abstract

The majority electron and minority hole mobilities have been calculated in GaAs for donor densities between 5×1016 and 1×1019 cm−3. Similarly, the majority hole and minority electron mobilities have been calculated for acceptor densities between 5×1016 and 1×1020 cm−3. All the important scattering mechanisms have been included. The ionized impurity and carrier–carrier scattering processes have been treated with a phase-shift analysis. These calculations are the first to use a phase-shift analysis for minority carriers scattering from majority carriers. The results are in good agreement with experiment, but predict that at high dopant densities minority mobilities should increase with increasing dopant density for a short range of densities. This effect occurs because of the reduction of plasmon scattering and the removal of carriers from carrier–carrier scattering because of the Pauli exclusion principle. Some recent experiments support this finding. These calculations do not treat the density-of-states modifications due to heavy doping, which should have only a small effect on the mobility at room temperature. The results are important for device modeling because of the need to have values for minority mobilities.

Majority‐carrier mobilities in undoped and n ‐type doped ZnO epitaxial layers

“…We have taken the effects of screening for both ionized impurities and polar optical phonon scattering into account. Polar interactions reflecting the ionicity of the lattice are dominant in scattering mechanism, while, at heavier doping levels, ionized impurity scattering controls inherent mobility limit curve [4,9]. The experimental data agree well with our calculation (solid curve) except for the intermediate concentration range.…”

“…The present publication reports carrier concentration dependence of mobility including an effect of the scattering by ionized donor centers as well as by the grain boundaries [3,4].…”

Anomalous reduction in the energy loss of electrons in p-type semiconductors

“…13 Thus, momentum relaxation and energy loss of minority electrons at very high hole densities reveal consistent behavior.…”

“…The behavior of the electron mobility and momentum relaxation is known from transport measurements [9][10][11] and theoretical calculations. 12,13 However, no direct observation of the femtosecond energy relaxation of minority electrons has been reported for doping concentrations above pϾ2ϫ10 19 cm Ϫ3 .…”

Two-band analysis of hole mobility and Hall factor for heavily carbon-doped p-type GaAs

“…29,30 Although transport calculations based on such an approximation have shown good agreement with experimental results, this approximation may not provide an adequate quantitative physical picture of the processes involved in two-band transport, such as the Hall factor, the contributions of each type of particle to the total mobility, and the importance of various interband scattering mechanisms. In order to obtain this information, it is necessary that the interactions between the two bands be explicitly taken into account in theoretical calculations.…”