Main Peak Profiles of Total Reflection X-Ray Fluorescence Analysis of Si(001) Wafers Excited by Monochromatic X-Ray Beam W-Lβ (I)

Yakushiji, Kenji; Ohkawa, Shinji; Yoshinaga, Atsushi; Harada, Jimpei

doi:10.1143/jjap.31.2872

Cited by 13 publications

(3 citation statements)

References 2 publications

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“…3 The intensities of the Fe and Ni Ka lines also change along with the intensity of the W La lines. When we compare the surface cleanness of plural silicon wafers with different vicinal surfaces, one must take into account the difference in the intensity of the W La lines.…”

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confidence: 98%

Spurious Peaks in Total Reflection X-Ray Fluorescence Analysis

et al. 1995

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This paper presents details concerning such spurious peaks as Fe Ka and Ni Ka radiation, which are often observed in the trace determination of metallic impurities on silicon wafers by using a monochromatic total reflection X-ray fluorescence (TXRF) analyzer. The intensity of a spurious peak varies along with changes in the incident azimuth angle and/or detected intensity of the primary X-ray beam. The origin of this phenomenon is impurities existing along the path of Xrays. This phenomenon influences the accuracy of trace TXRF analysis, and a practical detection limit of a TXRF analyzer becomes worse by approximately one order, becoming 10" atoms/cm2, than the calculated detection limit (2 -8X1010 atoms/cm2) in our case.

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Spurious Peaks in Total Reflection X-Ray Fluorescence Analysis

et al. 1995

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“…Thus, a new problem that originates in detector quality is revealed: that of the spurious peak (or impurity peak). 12,13 Any impurities in the detection element or casing are excited by scattered or diffracted excitation xrays, and emit their characteristic fluorescent x-rays. These x-rays are detected by the SSD, and spurious peaks appear in the measured spectrum.…”

Section: Instrumental Factorsmentioning

confidence: 99%

Error factors in quantitative total reflection x-ray fluorescence analysis

Mori

Uemura

1999

X-Ray Spectrom.

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This paper reviews and discusses the error factors in quantitative total reflection x‐ray fluorescence analysis, primarily with regard to the surface contamination of silicon wafers. The error factors were classified into three origins: instrumental, sample and data processing. The instrumental error factors originate from source x‐ray stability, accuracy of the mechanical glancing angle, position accuracy of sample stage and spurious peaks from the detection system. The sample error factors arise from lateral and depth distribution of the analyte, surface roughness and diffraction of the primary x‐rays. The data processing error factors are from interfering peaks and background definition. The accuracy and detection limit are affected by all the error sources listed above. Of these factors, the depth distribution of the analyte is the most important, because this factor is often overlooked and because it is difficult to control. Copyright © 1999 John Wiley & Sons, Ltd.

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“…The TXRF method is applied to determine the contamination on an Si wafer. [3][4][5] There are cases where contamination exists on the wafer or inside the Si. This can be distinguished by scanning the detection angle of fluorescent x-rays or scanning the incident x-ray glancing angle; however, the incident angle is usually fixed near to the critical angle of total reflection in a routine TXRF analysis.…”

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Experimental Evaluation of the Mo Ka X-Ray Probing Depth for a GaAs Wafer in a Total-Reflection X-Ray Fluorescence Analysis

1997

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The total reflection x-ray fluorescence (TXRF) method is a powerful tool for the surface analysis of flat materials, such as Si wafers. The probing depth of TXRF is an important factor in a quantitative TXRF analysis. This is the first time that the probing depth under total-reflection conditions was experimentally evaluated by analyzing the takeoff-angle dependence of x-ray fluorescence. Our experimental results, measuring different incident angles, fit the theoretical curves. Finally, the relationship between the probing depth and the incident angle was obtained. We found the takeoffangle dependent measurement of x-ray fluorescence to be a powerful means for determining the probing depth in the TXRF method.

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Main Peak Profiles of Total Reflection X-Ray Fluorescence Analysis of Si(001) Wafers Excited by Monochromatic X-Ray Beam W-Lβ (I)

Cited by 13 publications

References 2 publications

Spurious Peaks in Total Reflection X-Ray Fluorescence Analysis

Spurious Peaks in Total Reflection X-Ray Fluorescence Analysis

Error factors in quantitative total reflection x-ray fluorescence analysis

Experimental Evaluation of the Mo Ka X-Ray Probing Depth for a GaAs Wafer in a Total-Reflection X-Ray Fluorescence Analysis

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