Electron beam lithography uses an accelerated electron
beam to
fabricate patterning on an electron-beam-sensitive resist but requires
complex dry etching or lift-off processes to transfer the pattern
to the substrate or film on the substrate. In this study, etching-free
electron beam lithography is developed to directly write a pattern
of various materials in all-water processes, achieving the desired
semiconductor nanopatterns on a silicon wafer. Introduced sugars are
copolymerized with metal ions-coordinated polyethylenimine under the
action of electron beams. The all-water process and thermal treatment
result in nanomaterials with satisfactory electronic properties, indicating
that diverse on-chip semiconductors (e.g., metal oxides, sulfides,
and nitrides) can be directly printed on-chip by an aqueous solution
system. As a demonstration, zinc oxide patterns can be achieved with
a line width of 18 nm and a mobility of 3.94 cm2 V–1 s–1. This etching-free electron
beam lithography strategy provides an efficient alternative for micro/nanofabrication
and chip manufacturing.