Magnetotransport studies of strongly disordered annealed amorphous Fe/Si multilayers

Weak-Localization Correction to the Anomalous Hall Effect in Polycrystalline Fe Films

“…The above interpretation can also account for the BY data on amorphous films, provided that SJM xy = SSM xy is assumed to be sufficiently large [16] and the interaction contribution to xx is small due to a cancellation of exchange and Hartree terms [17]. It is also consistent with data on Fe=Si multilayers [18] where the ratio A AH =A R was found to be intermediate between BY and RR scaling.…”

Temperature Dependence of the Anomalous Hall Effect from Electron Interactions

“…This conclusion was further supported by the theoretical analysis of Langenfeld and Wölfle [23] who showed by an explicit calculation that Coulomb anomaly terms due to Al'tshuler-Aronov (AA) corrections cancel identically from the anomalous Hall conductivity. The subsequent measurements on amorphous Fe x Si 1−x multilayers revealed more complex picture where not only anomalous contribution to Hall resistance was seen, but also a clear temperature dependence of the anomalous Hall conductance was observed [24]. The multitude of experiments that followed on a variety of material systems including (amorphous/polycrystalline/granular) ferromagnetic thin films of Fe, Ni, FePt, CoFeB, CNi 3 [25][26][27][28][29] as well as ferromagnetic semiconductors Ga 1−x Mn x As and HgCr 2 Se 4 [30,31] provided more comprehensive evidences for the quantum anomalies in the temperature and disorder dependence of the anomalous Hall conductivity.…”

Anomalous Hall effect in Co40Fe40B20/SiO2/Si structures

“…The effect of FM/FM interface on AHE was studied in [Co/Ni] n structures [9]. The AHE in ferromagnet/semiconductor (FM/SC) structures was also reported in Fe/Si, Fe/Ge and Fe/GaAs [10][11][12]. Compared with the extensively studied AHE in magnetic materials, little effort is made to investigate the AHE in FM/SiO 2 /Si structures focusing on the shunting effect from Si.…”