1997
DOI: 10.1103/physrevb.55.3699
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Magnetotransport in epitaxial thin films of the magnetic perovskitePr0.5Sr0.5

Abstract: Thin, c ជ -axis oriented films of the magnetic perovskite Pr 0.5 Sr 0.5 MnO 3 were prepared by dc-magnetron sputtering, structurally characterized by x-ray diffraction and their physical properties investigated by magnetization and electrical transport measurements. Ferromagnetic ordering appears in zero field at 263 K, followed by a second transition into an antiferromagnetic state at 160 K. The zero-field resistivity has a semiconducting behavior above the Curie and below the Néel temperature and is analyzed… Show more

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Cited by 42 publications
(25 citation statements)
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“…Quantitatively, a model that accounts for the MR in manganites based on activated hopping with additional barriers due to magnetic misalignment of the local moments has been developed by Wagner and co-workers, who expressed the new activation barrier as 51,52 ( )…”
Section: Field Dependence Of the Electronic Transportmentioning
confidence: 99%
See 1 more Smart Citation
“…Quantitatively, a model that accounts for the MR in manganites based on activated hopping with additional barriers due to magnetic misalignment of the local moments has been developed by Wagner and co-workers, who expressed the new activation barrier as 51,52 ( )…”
Section: Field Dependence Of the Electronic Transportmentioning
confidence: 99%
“…51,52 for a formal development of the model). Given that the application of an external magnetic field does not affect the term W ij , the drop in resistivity (i.e.…”
Section: Field Dependence Of the Electronic Transportmentioning
confidence: 99%
“…13,17,18 We have measured resistivity vs temperature characteristics for a wide range of samples which exhibit a metal-insulator transition. The T Ϫ1 law, which would be characteristic of nearest-neighbor hopping or activation to a mobility edge, does not fit the data.…”
mentioning
confidence: 99%
“…As a highly correlated electron system, at low temperature (45 K < T < 100 K), CaCuMn 6 O 12 has a small gap appearing at E F because the resistivity is in accordance with Mott's law for variable range hopping and the hopping law is log(ρ)∝(1/T) 1/2 [12]. At high temperature (T > 100 K), the carriers form small dielectric polarons and the temperature dependence of resistivity follows thermally activated nearest-neighbor hopping, i.e., log(ρ)∝(1/T) [13]. The exact turning point of two parts was determined as 113.3 K through anatomizing the inset of Fig.…”
Section: Electrical Propertiesmentioning
confidence: 81%