Magnetotransport effects in paramagnetic Gd x Mn1 − x S

Abstract

The electrical resistance of Gd x Mn 1 -x S solid solutions with x = 0.1, 0.15, and 0.2 has been measured at mag netic field H = 0.8 T and at zero magnetic field within the 100 K < T < 550 K temperature range. The mag netoresistance peak is observed above room temperature. On heating, the composition with x = 0.2 exhibits the change of magnetoresistance sign from positive to negative and the magnetoresistance peak near the tran sition to the magnetically ordered state. The experimental data are interpreted in the framework of the model involving the orbital ordering of electrons and the arising electrical polarization leading to the changes in the spectral density of states for electrons in the vicinity of the chemical potential in the applied magnetic field.

Concentration dependences of the structural, magnetic and kinetic properties of manganese chalcogenides doped with tellurium

“…With an increase in the substitution concentration, the magnitude of the magnetoresistance (δH) decreases in absolute value and δH ~ 5% for the composition X = 0.2 is observed in the paramagnetic area. This value is much smaller in comparison with magnetoresistance in solid solutions based on manganese sulfide [22][23][24]. A further increase in concentrations to X = 0.4 leads to the disappearance of the effect.…”

Magnetoelectric and magneto­resistive properties of the СexMn1-xS semiconductors

“…Previously, the magnetoresistive effect in the paramagnetic region was observed in the Gd x Mn 1– x S solid solution . Gadolinium sulfide is also a metal, whose resistivity is lower than the resistivity of CeS by a factor of 3 and the lattice constant is smaller than that of CeS by 5%.…”

Magnetoresistive effect in YbxMn1-xSat small concentrations

“…The resistance detects a small maximum in the region of formation of the orbital ordering [15], the electron density of states at the Fermi level splits in the magnetic field, which leads to an increase in the resistance in the paramagnetic phase [16][17]. The formation of an orbital ordering is accompanied by lattice deformations and changes in the magnetic state [18][19][20]. In chalcogenide compounds with polymorphic transitions, negative magnetoresistance is associated with tunneling of electrons having the same spin orientation in the magnetic field [21][22][23].…”