Magnetostriction in spin valves

Baril, L.; Gurney, B. A.; Wilhoit, Dennis R.; Speriosu, V. S.

doi:10.1063/1.369103

Cited by 39 publications

(26 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Magnetostriction effect has long been observed and analyzed, and so has its reverse effect that we actually use [2,3]. Here we present a simple derivation for an equation relating the gauge factor and the magnetoresistive properties of the SDT devices.…”

Section: Iii3 Strain Sensitivity Analysismentioning

confidence: 99%

Magnetostriction effect of amorphous CoFeB thin films and application in spin-dependent tunnel junctions

Wang¹,

Nordman²,

Qian³

et al. 2005

Journal of Applied Physics

View full text Add to dashboard Cite

CoFeB thin films and magnetic tunnel junctions using them are studied for magnetostriction effect. The single layer films were sputter deposited with excellent soft magnetic properties including a high saturation magnetization of 1.5 T, a near zero hard axis coercivity, a low easy axis coercivity of 2.0 Oe, and an induced magnetic anisotropy field of 32 Oe. The saturation magnetostriction constant is measured to be 31 ppm.Magnetic tunnel junctions (MTJ) were fabricated and tested for potential strain gauge applications. The gauge factor for the magnetostrictive MTJs, a measure of strain sensitivity, is many times of the best piezoresistive devices.

show abstract

Section: Iii3 Strain Sensitivity Analysismentioning

confidence: 99%

Magnetostriction effect of amorphous CoFeB thin films and application in spin-dependent tunnel junctions

Wang¹,

Nordman²,

Qian³

et al. 2005

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The Currently, GMR sensor devices are fabricated on rigid inorganic substrates like oxidized silicon (SiOx) wafers or glass. Although there is some activity toward straining of GMR structures grown on this kind of substrates by means of bending to study their magnetoelastic behavior 98,99 , the maximal achievable deformation of a few ‰ is far too low for any applications within the concept of stretchable electronics. In order to be able to elastically stretch GMR sensor elements to much higher levels of deformation, the magnetic nanomembranes should be situated on an elastomeric substrate.…”

Section: Technological Approachmentioning

confidence: 99%

“…Deformations of GMR sensoric structures were originally applied on conventional SiOx wafer or glass supports to study effects of inverse magnetostriction on the magnetoelectric characteristics 98 and eventually use those for highly sensitive strain gauges 99,105 . Although the supports used in these studies are considered rigid, they allow for a small amount of bending deformation, which is translated to the functional magnetic layers on the outer surface as a tensile deformation (bending strain) of the order of about 0.1%.…”

Section: State-of-the-artmentioning

confidence: 99%

Stretchable Magnetoelectronics

et al. 2011

View full text Add to dashboard Cite

Abstract:In this work, stretchable magnetic sensorics is successfully established by combining metallic thin films revealing a giant magnetoresistance effect with elastomeric materials. Stretchability of the magnetic nanomembranes is achieved by specific morphologic features (e.g. wrinkles), which accommodate the applied tensile deformation while maintaining the electrical and magnetic integrity of the sensor device. The entire development, from the demonstration of the world-wide first elastically stretchable magnetic sensor to the realization of a technology platform for robust, ready-touse elastic magnetoelectronics with fully strain invariant properties, is described. The prepared soft giant magnetoresistive devices exhibit the same sensing performance as on conventional rigid supports, but can be stretched uniaxially or biaxially reaching strains of up to 270% and endure over 1,000 stretching cycles without fatigue. The comprehensive magnetoelectrical characterization upon tensile deformation is correlated with in-depth structural investigations of the sensor morphology transitions during stretching.With their unique mechanical properties, the elastic magnetoresistive sensor elements readily conform to ubiquitous objects of arbitrary shapes including the human skin. This feature leads electronic skin systems beyond imitating the characteristics of its natural archetype and extends their cognition to static and dynamic magnetic fields that by no means can be perceived by human beings naturally.Various application fields of stretchable magnetoelectronics are proposed and realized throughout this work. The developed sensor platform can equip soft electronic systems with navigation, orientation, motion tracking and touchless control capabilities. A variety of novel technologies, like smart textiles, soft robotics and actuators, active medical implants and soft consumer electronics will benefit from these new magnetic functionalities. Michael Melzer: Stretchable MagnetoelectronicsOutline 4

show abstract

“…23 Wafer scale CMOS circuitry on ultra-thin 6 nm Si membranes obtained by controlled spalling technology has been shown to be fully functional at bending radii of 6.3 mm. 24 Bending tests of GMR sensorics prepared on 330-380 lm thick SiO x wafers 25,26 or 250 lm glass slides 27 were carried out to study effects of inverse magnetostriction on the magnetoelectric characteristics 27 and eventually to use those for highly sensitive strain gauges. 25,26 The used thick supports allow bending radii above 100 mm only.…”

mentioning

confidence: 99%

High-performance giant magnetoresistive sensorics on flexible Si membranes

Pérez

Melzer

Makarov

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

We fabricate high-performance giant magnetoresistive (GMR) sensorics on Si wafers, which are subsequently thinned down to 100 mu m or 50 mu m to realize mechanically flexible sensing elements. The performance of the GMR sensors upon bending is determined by the thickness of the Si membrane. Thus, bending radii down to 15.5mm and 6.8mm are achieved for the devices on 100 mu m and 50 mu m Si supports, respectively. The GMR magnitude remains unchanged at the level of (15.3 +/- 0.4)% independent of the support thickness and bending radius. However, a progressive broadening of the GMR curve is observed associated with the magnetostriction of the containing Ni81Fe19 alloy, which is induced by the tensile bending strain generated on the surface of the Si membrane. An effective magnetostriction value of lambda(s) = 1.7 x 10(-6) is estimated for the GMR stack. Cyclic bending experiments showed excellent reproducibility of the GMR curves during 100 bending cycles

show abstract

Magnetostriction in spin valves

Cited by 39 publications

References 10 publications

Magnetostriction effect of amorphous CoFeB thin films and application in spin-dependent tunnel junctions

Magnetostriction effect of amorphous CoFeB thin films and application in spin-dependent tunnel junctions

Stretchable Magnetoelectronics

High-performance giant magnetoresistive sensorics on flexible Si membranes

Contact Info

Product

Resources

About