Magnetostriction and internal stresses in thin films: the cantilever method revisited

Lacheisserie, E. du Tremolet de; Peuzin, J. C.

doi:10.1016/0304-8853(94)90464-2

Cited by 217 publications

(108 citation statements)

References 6 publications

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“…This is in very good agreement with the experimentally determined values. Thus we conclude that the proposed method conforms with standard magnetostriction measurement techniques, which e. g. use the bending of a cantilever covered with a thin magnetostrictive film [29][30][31][32] , and is therefore suitable to quantitatively determine the magnetostriction constants of thin films. In contrast to cantilever-based experiments, where magnetostriction causes a bending of the mechanical element, the present approach uses a pre-stressed, doubly-clamped nanobeam where the magnetostrictive stress modifies the total stress along the beam axis and therefore changes the resonance frequency of the beam.…”

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confidence: 61%

A versatile platform for magnetostriction measurements in thin films

Pernpeintner

Holländer

Seitner

et al. 2016

Journal of Applied Physics

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We present a universal nanomechanical sensing platform for the investigation of magnetostriction in thin films. It is based on a doubly-clamped silicon nitride nanobeam resonator covered with a thin magnetostrictive film. Changing the magnetization direction within the film plane by an applied magnetic field generates a magnetostrictive stress and thus changes the resonance frequency of the nanobeam. A measurement of the resulting resonance frequency shift, e. g. by optical interferometry, allows to quantitatively determine the magnetostriction constants of the thin film. We use this method to determine the magnetostriction constants of a 10 nm thick polycrystalline cobalt film, showing very good agreement with literature values. The presented technique can be useful in particular for the precise measurement of magnetostriction in a variety of (conducting and insulating) thin films, which can be deposited by e. g. electron beam deposition, thermal evaporation or sputtering.Keywords: nanomechanics; magnetostriction; NEMS; thin films Nanomechanical systems are an established platform for mass and force detection. In particular, the high quality factors of their vibrational modes 1 make them ideally suited for high-precision sensing applications in (nano)biology, medicine, chemistry and physics 2-6 . For example, nanomechanical resonators allow for the detection of DNA molecules 7 and atoms 8 , and nanomechanical resonance spectroscopy has been proposed as a versatile tool and extension of conventional spectroscopy techniques in biology and chemistry 9 . In solid state physics, nanomechanical sensors are utilized for the investigation of material properties of thin films 10-12 , which often significantly differ from those of bulk materials 13,14 . One particular aspect is the investigation of externally tunable material properties as discussed in the field of multiferroics 15 . For example, it has been demonstrated that magnetostriction and magnetic anisotropy in a Ga 0.948 Mn 0.052 As thin film can precisely be investigated using a nanomechanical beam setup 16 .Here, we extend this concept and present a universal platform for the experimental investigation of magnetostrictive thin films which uses a doubly-clamped silicon nitride (Si 3 N 4 ) nanobeam covered with a thin layer of the material of interest. This approach allows for the investigation of any magnetostrictive thin film materialconducting as well as insulating-which can be deposited on a Si 3 N 4 nanobeam, using e. g. electron beam evapoa) Electronic mail: matthias.pernpeintner@wmi.badw.de b) Electronic mail: huebl@wmi.badw.de ration, thermal evaporation or sputtering. As the thin film deposition is the last step in the sample fabrication process, the ferromagnetic film is not exposed to etching solution or dry etch reactants, which allows to apply this technique to a broad range of materials. Moreover, the measurement sensitivity is expected to be independent of the film thickness which could be useful for the investigation of very thin magnetostrictive...

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confidence: 61%

A versatile platform for magnetostriction measurements in thin films

Pernpeintner

Holländer

Seitner

et al. 2016

Journal of Applied Physics

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“…The magneto-elastic constant was measured using the cantilever method [22] and was found to be b g,2 EÀ7 MPa. A magnetic EA is obtained in the magnetic layer by applying a magnetic field during deposition.…”

Section: Magnetostrictive Nanostructure With Srt On Thick Pzt Layer Amentioning

confidence: 99%

“…The bending and torsion vibration amplitudes of the cantilever are recorded using a similar method as in Ref. [22]. A two-dimensional position sensitive diode (PSD-Hamamatsu Photonics) measures the deflection of a laser beam reflected on the free tip of the cantilever.…”

Section: Magnetostrictive Nanostructure With Srt On Thick Pzt Layer Amentioning

confidence: 99%

Thin film magnetoelectric composites near spin reorientation transition

Tiercelin

Preobrazhensky

Mortet

et al. 2009

Journal of Magnetism and Magnetic Materials

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a b s t r a c tWe report the use of a magnetic instability of the spin reorientation transition type to enhance the magnetoelectric sensitivity in magnetostrictive-piezoelectric structures. We present the theoretical study of a clamped beam resonant actuator composed of a piezoelectric element on a passive substrate actuated by a magnetostrictive nanostructured layer. The experiments were made on a polished 150 mm thick 18 Â 3 mm 2 lead zirconate titanate (PZT) plate glued to a 50 mm thick silicon plate and coated with a giant magnetostrictive nanostructured Nx(TbCo 2 5nm /FeCo 5nm ) layer. A second set of experiments was done with magnetostrictive layer deposited on PZT plate. Finally, a film/film structure using magnetostrictive and aluminium nitride films on silicon substrate was realized, and showed ME amplitudes reaching 30 V Oe À1 cm À1. Results agree with analytical theory.

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“…This is important because the analysis of the cantilever deflections, in the case of crystalline films and substrates, differs markedly from that performed for isotropic plates, from which it is obtained the following expression relating the cantilever deflection and the magnetostriction [19,20]:…”

Section: Introductionmentioning

confidence: 99%

Magnetoelastic stresses in rare-earth thin films and superlattices

Arnaudas

Ciria

Fuente

et al. 2001

Low Temperature Physics

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A rn auda s J. I., Cir i a M., de la Fu ente C., Beni to L., del Mo ral A. , War d R . C. C., Wells M . R ., Dufou r C ., Dume snil K ., an d Mou gi n A. Mag net oelastic str esses in ra re-ea rth thin fil m s and sup erl at ti cesA rna udas J. I., Cir ia M ., de la Fue nte C ., B enito L., del Mor al A., Ward R. C. C., W ell s M . R. , Du four C ., Du mesn i l K., and Mougin A.M ag neto elastic str esses in rar e-ear th th i n fi lms a nd supe rl att i c es We report on the study of the magnetoelastic behavior of some rare-earth based thin films and superlattices (SL's). Magnetoelastic stress (MS) measurements (by using a cantilever capacitive technique) within a wide range of temperatures (10-300 K) and magnetic fields (up to 12 T) have been performed. We derive expressions relating the cantilever curvatures and the magnetoelastic stresses in anisotropic thin films and SL's (for cubic symmetry) deposited onto crystalline substrates. The magnetoelastic energy associated to the interfaces and the epitaxial stress dependence of the volume MS has been investigated by studying the basal plane MS in Ho n /Lu 15 and in Ho 10 /Y m SL's: we obtain interface MS even higher than the volume ones and the effect in bulk's MS of the epitaxial strain is large. In Dy/Y and Er/Lu SL's we also deduce the MS contributions but, for Er/Lu, incomplete saturation leads to inconclusive results. Although the latter case also happens in Ho/Tm SL's, MS clearly shows anisotropy competition. In TbFe 2 (t)/YFe 2 (1000 A°) (300 A° < t < 1300 A°) epitaxial bilayers, we determine all the MS allowed by the symmetry and show that epitaxial stress strongly modifies the tetragonal MS. The thermal dependence of MS parameters is also analysed. PACS: 75.70.-i, 75.80.+q

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Magnetostriction and internal stresses in thin films: the cantilever method revisited

Cited by 217 publications

References 6 publications

A versatile platform for magnetostriction measurements in thin films

A versatile platform for magnetostriction measurements in thin films

Thin film magnetoelectric composites near spin reorientation transition

Magnetoelastic stresses in rare-earth thin films and superlattices

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