Magnetoresistive Sensors

Dibbern, U.

doi:10.1002/9783527619269.ch9d

Cited by 4 publications

(2 citation statements)

References 65 publications

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“…The sensitivity to the magnetic field is determined by the ratio of the signal amplitude imbalance in magnetoresistive bridge, caused the by influence of the magnetic field, to the value of that field in the linear region of the transfer characteristics of the sensor. It is the most important parameter [1][2], because it determines the use of sensors to address various problems. The To ensure a high level of output characteristics of AMR sensors it is needed to improve the magnetic properties of the magnetoresistive material (Fig.…”

Section: Introductionmentioning

confidence: 99%

Magnetic Field MEMS-Sensor: Functional Characteristics Control during the Formation of Magnetosensitive Structures

Djuzhev

Iurov

Chinenkov

2018

DDF

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In this work the results of substrate temperature effects on coercivity and magnetoresistance in ferromagnetic structures are shown. It was found that with an increase of the substrate temperature from 270 to 390 °C the magnetoresistance increases from 1.2 to 2.3% and the coercive force from 1.6 to 5.3 Oe. A new topology of anisotropic magnetoresistive structures is proposed. In these structures the shape of ferromagnetic elements repeats the shape of nonmagnetic conducting shunts. Sensitivity values obtained for both types of magnetic structures are compared.

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Section: Introductionmentioning

confidence: 99%

Magnetic Field MEMS-Sensor: Functional Characteristics Control during the Formation of Magnetosensitive Structures

Djuzhev

Iurov

Chinenkov

2018

DDF

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“…Various sensor designs and electronic evaluation circuits have been developed to overcome temperature dependence, offset, and hysteresis [1,2].…”

Section: Introductionmentioning

confidence: 99%

Anisotropic Magnetoresistive Study in Bilayer NiFe-NiO for Sensor Applications

Morón¹,

García²,

Tremps³

et al. 2013

KEM

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Abstract. Related with the detection of weak magnetic fields, the anisotropic magnetoresistive (AMR) effect is widely utilized in sensor applications. Exchange coupling between an antiferromagnet (AF) and the ferromagnet (FM) has been known as a significant parameter in the field sensitivity of magnetoresistance because of pinning effects on magnetic domain in FM layer by the bias field in AF. In this work we have studied the thermal evolution of the magnetization reversal processes in nanocrystalline exchange biased Ni 80 Fe 20 /Ni-O bilayers with large training effects and we report the anisotropic magnetoresistance ratio arising from field orientation in the bilayer.

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Magnetische Effekte

Baltes¹

1993

Sensorik

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Magnetoresistive Sensors

Cited by 4 publications

References 65 publications

Magnetic Field MEMS-Sensor: Functional Characteristics Control during the Formation of Magnetosensitive Structures

Magnetic Field MEMS-Sensor: Functional Characteristics Control during the Formation of Magnetosensitive Structures

Anisotropic Magnetoresistive Study in Bilayer NiFe-NiO for Sensor Applications

Magnetische Effekte

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