Magnetoresistance quantum oscillations in a magnetic two-dimensional electron gas

Kunc, Jan; Piot, B. A.; Maude, D. K.; Potemski, M.; Grill, R.; Betthausen, Christian; Weiss, Dieter; Kolkovsky, Vl.; Karczewski, G.; Wójtowicz, T.

doi:10.1103/physrevb.92.085304

Cited by 11 publications

(17 citation statements)

References 36 publications

(84 reference statements)

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“…2a for a sample with n =1.7 × 10 11 cm −2 (refs 10, 11, 12). We note that the incorporation of magnetic moments in other high-mobilty two-dimensional charge carrier systems leads frequently to the deterioration of the device performance compared to non-doped structures1920212223. The sample shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Observation of anomalous Hall effect in a non-magnetic two-dimensional electron system

et al. 2017

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Anomalous Hall effect, a manifestation of Hall effect occurring in systems without time-reversal symmetry, has been mostly observed in ferromagnetically ordered materials. However, its realization in high-mobility two-dimensional electron system remains elusive, as the incorporation of magnetic moments deteriorates the device performance compared to non-doped structure. Here we observe systematic emergence of anomalous Hall effect in various MgZnO/ZnO heterostructures that exhibit quantum Hall effect. At low temperatures, our nominally non-magnetic heterostructures display an anomalous Hall effect response similar to that of a clean ferromagnetic metal, while keeping a large anomalous Hall effect angle θAHE≈20°. Such a behaviour is consistent with Giovannini–Kondo model in which the anomalous Hall effect arises from the skew scattering of electrons by localized paramagnetic centres. Our study unveils a new aspect of many-body interactions in two-dimensional electron systems and shows how the anomalous Hall effect can emerge in a non-magnetic system.

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Section: Resultsmentioning

confidence: 99%

Observation of anomalous Hall effect in a non-magnetic two-dimensional electron system

et al. 2017

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“…Furthermore, dips in SdH oscillations between nodes correspond to an alternating sequence of even and odd filling factors, which depends on the difference between the number of filled LLs for opposite spins, see Fig.2a-c. Due to the fact that at such low fields and elevated temperatures the Brillouin function contained in the exchange term (eq.3) is not yet saturated, T AF can be obtained from the temperature dependence of the node positions. Analyses of SdH beating patterns provide slightly different values for T AF : 180 mK [7] and 40 mK [139] in (Cd,Mn)Te QWs with x Mn = 0.3%, and 2.6±0.5 K [138] in a HgMnTe QW with x Mn = 2%.…”

Section: Modification Of Shubnikov-de Haas Oscillationsmentioning

confidence: 99%

2D electron gas in chalcogenide multilayers

Kazakov

Wójtowicz

2020

Chalcogenide

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Semiconductor interfaces, such as these existing in multilayer structures (e.g., quantum wells (QWs)), are interesting because of their ability to form 2D electron gases (2DEGs), in which charge carriers behave completely differently than they do in the bulk. As an example, in the presence of a strong magnetic field, the Landau quantization of electronic levels in the 2DEG results in the quantum Hall effect (QHE), in which Hall conductance is quantized. This chapter is devoted to the properties of such 2DEGs in multilayer structures made of compound semiconductors belonging to the class of Se-and Te-based chalcogenides. In particular, we will also discuss the interesting question of how the QHE phenomenon is affected by the giant Zeeman splitting characteristic of II-VI-based diluted magnetic semiconductors (DMSs), especially when the Zeeman splitting and Landau splitting become comparable. We will also shortly discuss novel topological phases in chalcogenide multilayers.

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“…Spin-up (n ↑) and spin-down (n ↓) ladders are indicated with blue and red colors, respectively; The black solid line shows the position of the Fermi energy E F . The chemical potential and spin polarization were calculated at temperature T = 0.050 K assuming Γ = 0.1 meV as the Gaussian broadening of the density of states 15 . magnetic domains.…”

Section: Diluted Magnetic Quantum Wellmentioning

confidence: 99%

Conductance resonances and crossing of the edge channels in the quantum Hall ferromagnetic state of Cd(Mn)Te microstructures

et al. 2019

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In this paper we report on the observation of very high and narrow magnetoconductance peaks which we attribute to the transition to quantum Hall ferromagnet (QHFM) state occurring at the edges of the sample. We show that the expected spatial degeneracy of chiral edge channels is spontaneously lifted in agreement with theoretical studies performed within the Hartree-Fock approximation. We indicate also that separated edge currents which flow in parallel, may nevertheless cross at certain points, giving rise to the formation of topological defects or one-dimensional magnetic domains. Furthermore, we find that such local crossing of chiral channels can be induced on demand by coupling spin states of a Landau level to different current terminals and applying a DC source-drain voltage.

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Magnetoresistance quantum oscillations in a magnetic two-dimensional electron gas

Cited by 11 publications

References 36 publications

Observation of anomalous Hall effect in a non-magnetic two-dimensional electron system

Observation of anomalous Hall effect in a non-magnetic two-dimensional electron system

2D electron gas in chalcogenide multilayers

Conductance resonances and crossing of the edge channels in the quantum Hall ferromagnetic state of Cd(Mn)Te microstructures

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