2004
DOI: 10.1016/j.jmmm.2004.04.008
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Magnetoresistance of layered structures with alternating in-plane and perpendicular anisotropies

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Cited by 17 publications
(29 citation statements)
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“…Both measurements were performed for samples in as-deposited state and after each stage of successive 1 h annealing in dry N 2 at different temperature T a increasing from 423 up to 523 K in 25 K steps. The M(H) and R(H) dependences are correlated in the whole magnetic field range [4].…”
Section: Methodsmentioning
confidence: 99%
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“…Both measurements were performed for samples in as-deposited state and after each stage of successive 1 h annealing in dry N 2 at different temperature T a increasing from 423 up to 523 K in 25 K steps. The M(H) and R(H) dependences are correlated in the whole magnetic field range [4].…”
Section: Methodsmentioning
confidence: 99%
“…The samples were deposited at room temperature onto Si(100) substrate. The thicknesses of the sublayers were chosen to ensure maximal value and linearity of the magnetoresistance [2][3][4]. The very good periodic structure of MLs was confirmed by low-and high-angle X-ray diffraction.…”
Section: Methodsmentioning
confidence: 99%
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“…The samples were prepared by deposition of multilayers on Si(100) wafers by magnetron sputtering in UHV [4]. Py-3.2 nm/Au-2.2 nm/Co-0.8 nm/Au-2.2 nm/ [Py-2.6 nm/Co-0.6 nm/Au-2 nm/Co-0.8 nm/Au-2 nm] 10 (further called A) and Py-3.2 nm/Au-2.2 nm/Co-0.8 nm/ Au-2.2 nm/[Co-0.6 nm/Py-2.6 nm/Au-2 nm/Co-0.8 nm/ Au-2 nm] 10 (further referred as B) were prepared.…”
Section: Methodsmentioning
confidence: 99%