Magnetoresistance in a High Mobility Two-Dimensional Electron System as a Function of Sample Geometry

Bockhorn, L.; Hodaei, A.; Schuh, Dieter; Wegscheider, Werner; Haug, Rolf J.

doi:10.1088/1742-6596/456/1/012003

Cited by 11 publications

(15 citation statements)

References 11 publications

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“…[3] it was assumed that the peak around zero magnetic field is given by scattering at the edges in the ballistic regime, similar to the quenching of the Hall effect [12,13]. Our analysis of the strong negative magnetoresistance for different length-to-width ratios shows that the peak is independent of the geometry [14], in contrast to the recent observation [15] for similar samples. In particular, we would also expect the peak to be larger for higher electron densities if it would depend on the ratio between classical cyclotron orbit and geometry.…”

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confidence: 43%

Magnetoresistance induced by rare strong scatterers in a high-mobility two-dimensional electron gas

et al. 2014

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We observe a strong negative magnetoresistance at nonquantizing magnetic fields in a high-mobility twodimensional electron gas. This strong negative magnetoresistance consists of a narrow peak around zero magnetic field and a huge magnetoresistance at larger fields. The peak shows parabolic magnetic field dependence and is attributed to the interplay of smooth disorder and rare strong scatterers. We identify the rare strong scatterers as macroscopic defects in the material and determine their density from the peak curvature.

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confidence: 43%

Magnetoresistance induced by rare strong scatterers in a high-mobility two-dimensional electron gas

et al. 2014

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“…13,14 In high-mobility 2DEGs, negative magnetoresistances are usually observed around zero magnetic field. 7,[15][16][17][18][19] These negative magnetoresistances normally consist of a temperature independent peak around zero magnetic field and a temperature dependent huge magnetoresistance at larger magnetic fields both with a parabolic magnetic field dependence. 15 A shoulder in the longitudinal resistivity marks the crossover between these different effects.…”

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confidence: 99%

Influence of oval defects on transport properties in high-mobility two-dimensional electron gases

Bockhorn

Velieva

Hakim

et al. 2016

Applied Physics Letters

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Rare macroscopic growth defects next to a two-dimensional electron gas influence transport properties and cause a negative magnetoresistance. On the basis of this, we show that the number of oval defects seen on the material surface is comparable with the density of macroscopic growth defects determined from the negative magnetoresistance. We examine several materials with different densities of oval defects nS which were grown in one cycle under the same conditions to verify our observations. Paradoxically, the material with the largest number of oval defects has also the highest electron mobility.

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“…[26][27][28] Later the formula of Hall viscosity was derived that depends on scattering time. 18,24 Experimentally viscous transport has been observed in GaAs, [19][20][21][22]38 Graphene, 11 P dCoO 2 , 36 and W P 2 . 37 The ultraclean sample of GaAs has mobility µ ∼ 10 7 cm 2 V s at low temperature and therefore allows both viscous and ballistic transport.…”

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confidence: 99%

“…The temperature dependent negative magnetoresistance in GaAs is explained by the viscous transport. [19][20][21][22][23][24][25] This is an interesting fact that temperature dependence of negative magnetoresistance in GaAs survives even when interparticles scattering length is greater than device size, l M C l S > 1. 23 In the presence of time reversal symmetry this should depend on the sample size being in the ballistic region of charges transport.…”

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confidence: 99%

Quantizing viscous transport in bilayer graphene

Imran

2020

J. Phys.: Condens. Matter

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The momentum transport in ultraclean bilayer graphene is characterized by the viscous transport. In quantizing magnetic field the momentum current passes through the guiding center of the cyclotron orbit. In this study we derive the formula of the quantized Hall viscosity for bilayer graphene. This can be detected in the non-local magnetoresistivity measurements that varies with the quantized step. For weak magnetic field the Landau levels start overlapping and lead to the Shubnikov–de-Haas oscillations, superimposed on the classical formulae, reference Steinberg (1958 Phys. Rev. 109 1486). These oscillations are present in the longitudinal and Hall viscosities.

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Magnetoresistance in a High Mobility Two-Dimensional Electron System as a Function of Sample Geometry

Cited by 11 publications

References 11 publications

Magnetoresistance induced by rare strong scatterers in a high-mobility two-dimensional electron gas

Magnetoresistance induced by rare strong scatterers in a high-mobility two-dimensional electron gas

Influence of oval defects on transport properties in high-mobility two-dimensional electron gases

Quantizing viscous transport in bilayer graphene

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