Magnetoresistance Effect of Thin Films Made of Single Graphite Crystals

Ohashi, Yutaro; Hironaka, Tatsuya; Kubo, T.; Shiiki, Kazuo

doi:10.7209/tanso.2000.410

Cited by 28 publications

(20 citation statements)

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“…Between 1997 and 2000, Ohashi et al succeeded in cleaving crystals down to approximately 20 nm in thickness, studied their electrical properties including Shubnikov-de Haas oscillations, and, quite remarkably, observed the electric field effect with resistivity changes of up to 8 %. [62,63] Also, Ebbesens group succeeded in the growth of micron-sized graphitic disks with thickness down to 60 layers and measured their electrical properties. [64] As for theory, let me make only a short note (for more references, see Refs.…”

Section: Graphene Incarnationsmentioning

confidence: 99%

Random Walk to Graphene (Nobel Lecture)

2011

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There can be only one: In their Nobel Reviews, the laureates tell the story about the ever changing, exciting scientific pathways that eventually—for example, with the aid of simple adhesive tape—led them to the discovery of graphene. Graphene is a carbon monolayer with almost magical abilities, including exceptional strength, stability, and electronic properties, with massless Dirac fermions as charge carriers.

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Section: Graphene Incarnationsmentioning

confidence: 99%

Random Walk to Graphene (Nobel Lecture)

2011

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“…The main problem those models and interpretation have, however, is directly related to the misleading assumption that the experimental magnetic and electrical data correspond to homogeneous bulk graphite samples. First experimental hints at odds with this assumption were obtained from the magnetic field dependence of the Hall coefficient of kish graphite samples of different thicknesses [8,9]; namely, the amplitude of the SdH oscillations decreases the smaller the thickness of the samples. For example, for a sample with a thickness of 18 nm (which corresponds to a stacking of more than 50 graphene layers), one can barely recognize the field oscillations in the Hall coefficient, in clear contrast to thicker flakes; for a review and discussion on these and other experimental results on this issue, see [10].…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, a nonlinear increase of the resistance of graphite samples of a smaller thickness was reported [11], which can be described as an anomalous increase in the estimated absolute resistivity [12] the thinner the sample. Surprisingly, none of those studies [8,9,11] tried to correlate the obtained results with the internal structure of the samples.…”

Section: Introductionmentioning

confidence: 99%

Diamagnetism of Bulk Graphite Revised

Semenenko

Esquinazi

2018

Magnetochemistry

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Recently published structural analysis and galvanomagnetic studies of a large number of different bulk and mesoscopic graphite samples of high quality and purity reveal that the common picture assuming graphite samples as a semimetal with a homogeneous carrier density of conduction electrons is misleading. These new studies indicate that the main electrical conduction path occurs within 2D interfaces embedded in semiconducting Bernal and/or rhombohedral stacking regions. This new knowledge incites us to revise experimentally and theoretically the diamagnetism of graphite samples. We found that the c-axis susceptibility of highly pure oriented graphite samples is not really constant, but can vary several tens of percent for bulk samples with thickness t 30 µm, whereas by a much larger factor for samples with a smaller thickness. The observed decrease of the susceptibility with sample thickness qualitatively resembles the one reported for the electrical conductivity and indicates that the main part of the c-axis diamagnetic signal is not intrinsic to the ideal graphite structure, but it is due to the highly conducting 2D interfaces. The interpretation of the main diamagnetic signal of graphite agrees with the reported description of its galvanomagnetic properties and provides a hint to understand some magnetic peculiarities of thin graphite samples.

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“…Several interesting reports of unusual electrical transport in ultra-thin graphite films have appeared recently [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] . These films are comprised of only a few atomic layers of sp2-bonded carbon known as "graphene" layers.…”

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Raman Scattering from High-Frequency Phonons in Supported n-Graphene Layer Films

et al. 2006

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Results of room temperature Raman scattering studies of ultrathin graphitic films supported on Si (111)/SiO 2 substrates are reported. The results are significantly different from those known for graphite. Spectra were collected using 514 nm radiation on films containing from n=1 to 20 graphene layers, as determined by atomic force microscopy. Both the 1 st and 2 nd order Raman spectra show unique signatures of the number of layers in the film. The nGL film analog of the Raman G-band in graphite exhibits a Lorentzian lineshape whose center frequency shifts linearly relative to graphite as ~1/n (for n=1 ω G~1 588 cm -1 ). Three weak bands, identified with disorder-induced 1 st order scattering, are observed at ~ 1350, 1450 and 1500 cm -1 . The 1500 cm -1 band is weak but relatively sharp and exhibits an interesting n-dependence. In general, the intensity of these D-bands decreases dramatically with increasing n. Three 2 nd order bands are also observed (~2450, ~2700 and 3248 cm -1 ). They are analogs to those observed in graphite. However, the ~2700 cm -1 band exhibits an interesting and dramatic change of shape with n. Interestingly, for n<5 this 2 nd order band is more intense than the G-band.

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Magnetoresistance Effect of Thin Films Made of Single Graphite Crystals

Cited by 28 publications

References 0 publications

Random Walk to Graphene (Nobel Lecture)

Random Walk to Graphene (Nobel Lecture)

Diamagnetism of Bulk Graphite Revised

Raman Scattering from High-Frequency Phonons in Supported n-Graphene Layer Films

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