Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures

Chiba, Daichi; Akiba, Norimitsu; Matsukura, F.; Ohno, Y.; Ohno, Hideo

doi:10.1063/1.1310626

Cited by 151 publications

(85 citation statements)

References 16 publications

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“…In contrast, in the (Ga,Mn)As-based semiconductor ferromagnetic/ nonmagnetic systems interlayer coupling of opposite FM sign was observedby magnetic measurements [13][14][15], neutron diffraction [16], and polarized neutron reflectometry [17]. These structures differ from the previously considered EuS-based ferromagnetic semiconductor multilayers by many aspects, which all can affect the IEC.…”

Section: Interlayer Coupling and The Tight-binding Modelmentioning

confidence: 78%

“…This so-called tunnel anisotropic magnetoresistance (TAMR) effect was observed when the saturation magnetization direction was changed in-plane [9][10][11] as well as when it was turned perpendicular to the magnetic layer [11,12]. It was also shown that the magnetization vectors of consecutive (Ga,Mn)As ferromagnetic layers separated by nonmagnetic spacers in a multilayer structure are correlated by an interlayer coupling [13][14][15][16][17] and structures exhibiting giant magnetoresistance (GMR) were obtained [14].…”

Section: Introductionmentioning

confidence: 97%

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Spin-Dependent Phenomena in (Ga,Mn)As Heterostructures

Sankowski

Kacman

2006

Acta Phys. Pol. A

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A model for spin-dependent tunneling in semiconductor heterostructures, which combines a multi-orbital empirical tight-binding approach with a Landauer-Büttiker formalism, is presented. Using this approach we explain several phenomena observed in modulated structures of (Ga,Mn)As, i.e., large values of the electron current spin polarization in magnetic EsakiZener diode and the high tunneling magnetoresistance ratio. Next, the relevance of this theory to assess the tunneling anisotropic magnetoresistance effect is studied. The results of applying the tight-binding model to describe the recently observed interlayer exchange coupling in (Ga,Mn)As-based superlattices are also shown.

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Section: Interlayer Coupling and The Tight-binding Modelmentioning

confidence: 78%

Section: Introductionmentioning

confidence: 97%

Spin-Dependent Phenomena in (Ga,Mn)As Heterostructures

Sankowski

Kacman

2006

Acta Phys. Pol. A

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“…8,9 A problem will also exist for multilayer semiconductor heterostructures, where the composition variation between nearest layers is about the same with a few percent difference in solid solution content. 10 Hence, the change in density is so small that the sensitivity of the XRR method may be insufficient for characterization of such materials. Thus, the search for a more direct and established approach to characterization of nm-thick layers in a variety of multilayered structures, which is sensitive and independent on optical properties, is highly desirable.…”

Section: Introductionmentioning

confidence: 99%

Measuring the roughness of buried interfaces by sputter depth profiling

Baryshev¹,

Klug²,

Zinovev³

et al. 2012

Nanotechnology

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In this communication, we report results of a high resolution sputter depth profiling analysis of a stack of 16 alternating MgO and ZnO nanolayers grown by atomic layer deposition (ALD) with thickness of ∼5.5 nm per layer. We used an improved dual beam approach featuring a low energy normally incident direct current sputtering/milling ion beam (first beam). Intensities of 24 Mg + and 64 Zn + secondary ions generated by a pulsed analysis ion beam (second beam) were measured as a function of sample depth by time-of-flight secondary ion mass spectrometry (TOF SIMS).Experimental results of this dual beam TOF SIMS depth profiling processed in the framework of the mixing-roughness-information (MRI) model formalism demonstrate that such an approach is capable of providing structural information for layers just a few nm thick. Namely, it was established that the interfacial roughness of the MgO/ZnO multilayer structure equals 1.5 nm. This finding by TOF SIMS was cross-validated by independent measurements with specular X-ray reflectivity (XRR) technique. In addition, the TOF SIMS-MRI analysis suggests that the obtained 1.5 nm roughness should be attributed to the native roughness (jagged type) of the interface rather than to interdiffusion at the interface during the ALD synthesis.

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“…Recently, Chiba et al [21] observed a TMR ratio of 5.5% at 20 K in a GaMnAs tunnel junction. Also, Tanaka and Higo [22] reported TMR ratios more than 70% at 8 K in GaMnAs/AlAs/GaMnAs heterostructures.…”

Section: Introductionmentioning

confidence: 99%

Quantum theory of tunneling magnetoresistance in GaMnAs/GaAs/GaMnAs heterostructures

Saffarzadeh

Shokri

2006

Journal of Magnetism and Magnetic Materials

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Using a quantum theory including spin-splitting effect in diluted magnetic semiconductors, we study the dependence of tunneling magnetoresistance (TMR) on barrier thickness, temperature and applied voltage in GaMnAs/GaAs/GaMnAs heterostructures. TMR ratios more than 65% are obtained at zero temperature, when one GaAs monolayer (≈ 0.565 nm) is used as a tunnel barrier. It is also shown that the TMR ratio decreases rapidly with increasing the barrier thickness and applied voltage, however at high voltages and low thicknesses, the TMR first increases and then decreases. Our model calculations well explain the main features of the recent experimental observations.

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Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures

Cited by 151 publications

References 16 publications

Spin-Dependent Phenomena in (Ga,Mn)As Heterostructures

Spin-Dependent Phenomena in (Ga,Mn)As Heterostructures

Measuring the roughness of buried interfaces by sputter depth profiling

Quantum theory of tunneling magnetoresistance in GaMnAs/GaAs/GaMnAs heterostructures

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