Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors

Abstract

We report on the high-field (up to 10T) magnetoresistance measurements performed on the short (down to 75-nm gate length) n-type Si metal-oxide-semiconductor field-effect transistors. The electron magnetoresistance mobility of these nanometer devices was determined for a wide range of the electron concentration (107–1013cm−2, i.e., from a weak to a strong inversion) and gate length (10μm–75nm). In the case of long samples, the magnetoresistance mobility was compared to the effective mobility obtained by the standard parameter extraction and the split C–V techniques. The results are discussed in terms of the scattering power-law two-dimensional transport analysis. The data clearly indicate a significant decrease of the mobility with the gate length reduction below 100nm.

Electron mobility in quasi-ballistic Si MOSFETs

“…In this paper we describe another approach that is based on mobility consideration [15]. This approach has two components: the theoretical one is based on a model of a ballistic device proposed by Dyakonov and Shur in 1993 [16]; the experimental part is based on application of high magnetic field measurements of the transistor resistance that allows to extract electron mobility in the channel [17]. Within this approach, basing on mobility measurements, we determined the transmission coefficient T for a series of bulk MOSFETs as a function of the inversion channel concentration and the gate length.…”

Mobility of Holes in Nanometer Ge-on-Si p-Type Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures

“…The magnetoresistance method has been applied to determine the electron mobility in different types of transistors, like Si MOSFETs and GaN/AlGaN HEMTs [1,3]. It gives an independent verification of such effects as degradation of the mobility with shortening of the channel length [4], the influence of the ballistic motion on the mobility [4] or enabled a detailed analysis of scattering mechanisms in the transistor channel [5].…”

“…An alternative method to determine the mobility in short-channel FETs was proposed some years ago [1] and is based on measurements of the geometrical magnetoresistance of a transistor. The geometrical magnetoresistance is an increase of the resistance in the magnetic field caused by turning the direction of the current lines by the Lorentz force.…”

“…Equation (1) states that one can estimate the mobility from the R(B) dependence if the access resistance is much smaller than R 0 [1], or if it is known. However, the condition R A R 0 is often difficult to fulfil in the case of nanometer transistors where the length of the channel is very short, and to determine R A (B) experimentally requires measurements on test structures.…”

The Ettingshausen coefficient in quantum wells under influence of laser radiation in the case of electron-optical phonon interaction

“…It leads to the appearance of size effects and alters most of the physical properties of materials [1]. As a result, the properties of low-dimensional systems such as: the Hall effect [2][3][4] absorption of electromagnetic waves, relative magnetoresistance, etc [5][6][7][8][9] are very different from the bulk semiconductors that the previous work studied [10][11][12][13]. The Ettingshausen effect which has just been researched in bulk semiconductors [14][15][16][17] is one of the electrical, magnetic and optical effects of semiconductor systems.…”