Magnetoresistance and spin-torque effect in flexible nanoscale magnetic tunnel junction

Wu, Weican; Zhang, Like; Cai, Jialin; Fang, Bin; Luo, Jun; Zeng, Zhongming

doi:10.1063/1.5111716

Cited by 2 publications

(1 citation statement)

References 33 publications

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“…[74] Moreover, flexible nanoscale MTJ with MgO-based barrier with TMR about 130% were fabricated using a transfer printing process recently. [75] It was found that the rectified voltage and resonant frequency of STD effect for this MTJ is similar to the ones observed in STD fabricated by standard techniques. This result suggests that the properties of STDs are quite resistant to mechanical stresses, which makes flexible microwave spintronics very promising for various applications.…”

Section: Std's Applicationssupporting

confidence: 73%

Spin‐Torque Diodes: From Fundamental Research to Applications

Skirdkov

Zvezdin

2020

Annalen der Physik

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Among a rich variety of emerging spintronic devices, spin‐torque diodes (STDs) are among the most interesting, from both a fundamental and an applied perspective. The spin‐torque diode effect occurs when a microwave alternating electric current injected into a magnetic tunneling junction (MTJ) is rectified due to the simultaneous actions of tunneling magnetoresistance and spin‐transfer torque. While the sensitivity of STDs observed in the initial research is rather modest (about 1.4 mV mW−1), after only a few years researchers have increased it to 200 kV W−1 and demonstrated rectification at nanowatt input powers, which radically exceeds the capabilities of mainstream Schottky diodes. This impressive progress is based on a deep understanding of the complex STD physics and on recent advances in MTJ fabrication technology. Herein, the experimental pathways toward increasing the sensitivity and extending the frequency range of STDs and theoretical works aimed at explaining the complex nonlinear dynamics are analysed, and a wide variety of possible STD applications are discussed.

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Section: Std's Applicationssupporting

confidence: 73%

Spin‐Torque Diodes: From Fundamental Research to Applications

Skirdkov

Zvezdin

2020

Annalen der Physik

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Research progress of flexible magnetic films and devices

杨华礼¹,

谢亚丽²,

芦增星³

et al. 2022

Acta Phys. Sin.

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With the rise of the Internet of Things, humanoid robots, and mobile healthcare services, etc., flexible electronic materials and devices have drawn extensive attention. Sensors and memories based on magnetic materials are important components of electronic devices. With the development of flexible film material preparation technology, people have prepared high-quality flexible and even stretchable magnetic metal and oxide films, which exhibit not only greater deformation ability, but also new physical effects and responses. Most recent studies show that flexible magnetoelectronic devices are advantageous in non-contact sensing, highly sensitive strain detection, and super-resolution tactile sensing, enabling broad application prospects. In this article, the progress of this emerging field is reviewed from the aspects of the preparation of flexible magnetic materials, the regulation of physical properties and the application of devices, and the future development trend is also prospected.

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Magnetoresistance and spin-torque effect in flexible nanoscale magnetic tunnel junction

Cited by 2 publications

References 33 publications

Spin‐Torque Diodes: From Fundamental Research to Applications

Spin‐Torque Diodes: From Fundamental Research to Applications

Research progress of flexible magnetic films and devices

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