Magnetoresistance and magnetic properties of ferromagnetic multilayers

Gondō, Yasuo; Suezawa, Y.

doi:10.1016/0040-6090(96)08681-6

Cited by 2 publications

(2 citation statements)

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“…When the thickness of the magnetic film is grater than 5 nm the spin-dependent scattering of the electrons takes place predominantly in the bulk of the magnetic layers and the galvanomagnetic properties are close related with the magnetic properties [5]. We present, in figure 2, the R 1 (H) curve (longitudinal MR effect) and the corresponding hysteresis loop of a Py(10 nm) thin film.…”

Section: Discussionmentioning

confidence: 99%

“…To maximize the PHE values in these films, the in plane component of the magnetic field (Hp) has to be applied at an angle a-=45 2 to current direction, as shown in figure 1. In some cases the samples were rotated back (a=O0 5 ) in order to minimize the influence of the AMR effect on the Hall effect measurements. In this case the current, [, is parallel to Hp.…”

Section: Methodsmentioning

confidence: 99%

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Magnetoresistance and Hall Effect Characterisation on Magnetic Thin Films Multilayers

Neamtu

Volmer

2002

MRS Proc.

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We have performed both Hall effect, and magnetoresistance measurements on thin films of Permalloy (Py 10 rim) and Py(tpy)/Cu(tc,)/Py(tpy) multilayers deposited on thermally oxidized Si substrates, where ty-=4 and 10 nm and tc.4 and 8 rim. The measurements were made at room temperature in a setup that allows us to perform both Hall effect and magnetoresistance measurements. The Hall effect measurements were performed varying the angle, AO, between the magnetic field direction and the normal to the film plane from 0 to 90 degrees. The measured voltages present hysteresis loops at low magnetic field even for A0--*0. From these measurements we can obtain some information regarding the magnetic properties of our samples.

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Section: Discussionmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%